4H SiC Seed Wafer Thickness 600±50μm <1120> Customization
Silicon carbide growth
Description of SiC Seed Wafer:
SiC seed crystal is actually a small crystal with the same crystal
orientation as the desired crystal, which serves as the seed for
growing a single crystal. It is also known as a crystal seed. By
using seed crystals with different crystal orientations, crystals
with different orientations can be obtained. Therefore, they are
categorized based on their purposes: CZ-pulled single-crystal seed
crystals, zone-melting seed crystals, sapphire seed crystals, and
SiC seed crystals. In this issue, I will mainly share with you the
production process of silicon carbide (SiC) seed crystals,
including the selection and preparation of silicon carbide seed
crystals, growth methods, thermodynamic properties, growth
mechanisms, and growth control.
The Character of SiC Seed Wafer:
1. Wide band gap
2. High thermal conductivity
3. High critical breakdown field strength
4. High saturation electron drift rate
Form of SiC Seed Wafer:
| Silicon carbide seed wafer |
| Polytype | 4H |
| Surface orientation error | 4°toward<11-20>±0.5º |
| Resistivity | customization |
| Diameter | 205±0.5mm |
| Thickness | 600±50μm |
| Roughness | CMP,Ra≤0.2nm |
| Micropipe Density | ≤1 ea/cm2 |
| Scratches | ≤5,Total Length≤2*Diameter |
| Edge chips/indents | None |
| Front laser marking | None |
| Scratches | ≤2,Total Length≤Diameter |
| Edge chips/indents | None |
| Polytype areas | None |
| Back laser marking | 1mm (from top edge) |
| Edge | Chamfer |
| Packaging | Multi-wafer cassette |
Physical photo of SiC Seed Wafer:
Applications of SiC Seed Wafer:
The silicon carbide seed crystal is used for preparing silicon
carbide.
Silicon carbide single crystals are typically grown using the
physical vapor transport method. The specific steps of this method
involve placing silicon carbide powder at the bottom of a graphite
crucible and positioning a silicon carbide seed crystal at the top
of the crucible. The graphite crucible is then heated to the
sublimation temperature of silicon carbide. The silicon carbide
powder decomposes into vapor-phase substances such as Si vapor,
Si2C, and SiC2. These substances sublime towards the top of the
crucible under the influence of an axial temperature gradient. Upon
reaching the top, they condense on the surface of the silicon
carbide seed crystal, crystallizing into a silicon carbide single
crystal.
The diameter of the seed crystal needs to match the desired crystal
diameter. During growth, the seed crystal is fixed at the top of
the crucible using an adhesive.
Application Picture of SiC Seed Wafer:
Packing and Shipping:
Product Recommend:
1.6inch
Dia153mm 0.5mm monocrystalline SiC Silicon Carbide crystal seed
Wafer or ingot
2.4h-N
100um Silicon Carbide Abrasive Powder For SIC Crystal
Growth
