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3C-N SiC Wafer 4inch Silicon Carbide Prime Grade Dummy Grade High Electron Mobility RF LED

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    Buy cheap 3C-N SiC Wafer 4inch Silicon Carbide Prime Grade Dummy Grade High Electron Mobility RF LED from wholesalers
     
    Buy cheap 3C-N SiC Wafer 4inch Silicon Carbide Prime Grade Dummy Grade High Electron Mobility RF LED from wholesalers
    • Buy cheap 3C-N SiC Wafer 4inch Silicon Carbide Prime Grade Dummy Grade High Electron Mobility RF LED from wholesalers
    • Buy cheap 3C-N SiC Wafer 4inch Silicon Carbide Prime Grade Dummy Grade High Electron Mobility RF LED from wholesalers
    • Buy cheap 3C-N SiC Wafer 4inch Silicon Carbide Prime Grade Dummy Grade High Electron Mobility RF LED from wholesalers

    3C-N SiC Wafer 4inch Silicon Carbide Prime Grade Dummy Grade High Electron Mobility RF LED

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    Brand Name : ZMSH
    Model Number : Silicon Carbide
    Delivery Time : 2 weeks
    Payment Terms : 100%T/T
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    3C-N SiC Wafer 4inch Silicon Carbide Prime Grade Dummy Grade High Electron Mobility RF LED

    3C-N SiC wafer 4inch Silicon Carbide Prime Grade Dummy Grade High electron mobility RF LED

    Description of 3C-N SiC Wafer:

    We can offer 4-inch 3C-N Silicon Carbide Wafers with N-Type SiC Substrates. It has a crystal structure of silicon carbide where the silicon and carbon atoms are arranged in a cubic lattice with a diamond-like structure. It has several superior properties to the widely used 4H-SiC, such as higher electron mobility and saturation velocity. The performance of 3C-SiC power devices is expected to be better, cheaper, and easier to manufacture than the currently mainstream 4H-SiC wafer. It is exceptionally suitable for power electronic devices.


    The Character of 3C-N SiC Wafer:


    1. Wide Bandgap
    High Breakdown Voltage: 3C-N SiC wafers have a wide bandgap (~3.0 eV), enabling high voltage operation and making them suitable for power electronics.
    2. High Thermal Conductivity
    Efficient Heat Dissipation: With a thermal conductivity of about 3.0 W/cm·K, these wafers can effectively dissipate heat, allowing devices to operate at higher power levels without overheating.
    3. High Electron Mobility
    Enhanced Performance: The high electron mobility (~1000 cm²/V·s) leads to faster switching speeds, making 3C-N SiC ideal for high-frequency applications.
    4. Mechanical Strength
    Durability: 3C-N SiC wafers exhibit excellent mechanical properties, including high hardness and resistance to wear, which enhances their reliability in various applications.
    5. Chemical Stability
    Corrosion Resistance: The material is chemically stable and resistant to oxidation, making it suitable for harsh environments.
    6. Low Leakage Currents
    Efficiency: The low leakage current in devices fabricated from 3C-N SiC wafers contributes to improved efficiency in power electronics.

    Form of 3C-N SiC Wafer:


    GradeProduction GradeDummy Grade
    Diameter100 mm +/- 0.5 mm
    Thickness350 um +/- 25 um
    Polytype3C
    Micropipe Density (MPD)5 cm-230 cm-2
    Electrical Resistivity0.0005~0.001 Ohm.cm0.001~0.0015 Ohm.cm

    Comparison of properties of SiC:


    Property4H-SiC Single Crystal3C-SiC Single Crystal
    Lattice Parameters (Å)

    a=3.076

    c=10.053

    a=4.36
    Stacking SequenceABCBABC
    Density (g/cm³)3.213.166
    Mohs Hardness~9.2~9.2
    Thermal Expansion Coefficient (CTE) (/K)4-5 x 10-62.5-3.5 x10-6
    Dielectric Constantc ~ 9.66c ~ 9.72
    Doping TypeN-type or Semi-insulating or P-typeN-type
    Band-gap (eV)3.232.4
    Saturation Drift Velocity (m/s)2.0 x 1052.5 x 105
    Wafer and Substrate SizesWafers: 2, 4 inch; smaller substrates: 10x10, 20x20 mm, other sizes are available and can be custom-made upon request

    Physical Photo of 3C-N SiC Wafer:

    Applications of 3C-N SiC Wafer:

    1. Power Electronics
    High-Power Devices: Used in power MOSFETs and IGBTs due to their high breakdown voltage and thermal conductivity.
    Switching Devices: Ideal for applications requiring high efficiency, such as DC-DC converters and inverters.
    2. RF and Microwave Devices
    High-Frequency Transistors: Utilized in RF amplifiers and microwave devices, benefiting from high electron mobility.
    Radar and Communication Systems: Employed in satellite communications and radar technology for improved performance.
    3. LED Technology
    Blue and Ultraviolet LEDs: 3C-SiC can be used in the production of light-emitting diodes, particularly for blue and UV light applications.
    4. High-Temperature Applications
    Sensors: Suitable for high-temperature sensors used in automotive and industrial applications.
    Aerospace: Utilized in components that must operate effectively in extreme environments.

    Application Picture of 3C-N SiC Wafer:

    Packing and Shipping of 3C-N SiC Wafer:

    Customized:

    Customized SiC crystal products can be made to meet customer's particular requirements and specifications. Epi-wafers can be custom made upon request.

    Product Recommend:

    1.2 inch 3inch 4 inch 6 inch 8inch Sic Wafer 4H-N/Semi Type



    2.6inch SiC Wafer 4H/6H-P


    Quality 3C-N SiC Wafer 4inch Silicon Carbide Prime Grade Dummy Grade High Electron Mobility RF LED for sale
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