Semi-insulating SiC On Si Composite Substrates 4H Exhibit High
Resistivity LED
Product Description of SiC On Si Composite Substrates:
A semi-insulating silicon carbide (SiC) on silicon compound wafer
is a specialized type of wafer that combines the properties of
silicon carbide and silicon materials. The wafer consists of a
layer of semi-insulating silicon carbide on top of a silicon
substrate. The term "semi-insulating" indicates that the material
has electrical properties that are not purely conductive or purely
insulating, but somewhere in between.
Character of SiC On Si Composite Substrates:
1. High Resistivity: Semi-insulating SiC on Si wafers exhibit high
resistivity, which means they have low electrical conductivity
compared to regular conductive materials.
2. Low Leakage: Due to their semi-insulating nature, these wafers
have low leakage currents, making them suitable for applications
requiring minimal electrical leakage.
3. High Breakdown Voltage: They typically have a high breakdown
voltage, enabling them to withstand high electric fields without
breakdown.
Parameter List of SiC On Si Composite Substrates:
| Item | Specification |
| Diameter | 150 ± 0.2 mm |
| SiC Polytype | 4H |
| SiC Resistivity | ≥1E8 Ω·cm |
| Transfer SiC layer Thickness | ≥0.1 μm |
| Void | ≤5 ea/wafer (2 mm > D > 0.5 mm) |
| Front roughness | Ra ≤ 0.2 nm (5 μm × 5 μm) |
| Si Orientation | <111>/<100>/<110> |
| Si Type | P/N |
| Flat/Notch | Flat/Notch |
| Edge Chip, Scratch, Crack (visual inspection) | None |
| TTV | ≤5 μm |
| Thickness | 500/625/675 ± 25 μm |
Applications of SiC On Si Composite Substrates:
1. High-Frequency Devices: Semi-insulating SiC on Si compound
wafers are commonly used in high-frequency devices such as RF
transistors, amplifiers, and microwave systems.
2. Power Electronics: They find applications in power electronic
devices where high breakdown voltage and low electrical losses are
crucial for efficient power conversion.
3. Sensors: These wafers are utilized in sensor technologies where
high resistivity and low leakage characteristics are required for
accurate sensing and measurement.
4. Optoelectronics: In optoelectronic devices like photodetectors
and LEDs, semi-insulating SiC on Si wafers can provide improved
performance due to their unique electrical properties.
Applications Picture of SiC On Si Composite Substrates:
FAQ:
1.Q:What is SiC on Si wafers?
A:These wafers are composed of a single crystal of SiC, a compound
semiconductor material where silicon and carbon atoms form a
strong, three-dimensional network.
2.Q:How is SiC compared to Si?
A: A key differentiator of SiC over silicon is its higher
system-level efficiency, owing to the greater power density, lower
power loss, higher operating frequency, and increased temperature
operation.
A: The use of silicon carbide composite (SiC/SiC) components within
fusion reactors has the potential to double the electricity
generated from every gigawatt of thermal energy produced compared
with advanced steel designs
