Silicon Carbide Wafer Customized size Semi-insulating SiC wafers Nearly Colorless Transparent High Pressure Resistance

2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafers, sic crystal ingots sic semiconductor substrates,Silicon Carbide crystal Wafer/ Customzied as-cut sic wafers

Semi silicon carbide wafer's abstract

Silicon carbide (SiC) is a kind of functional wide-band gap compound semiconductor material. In recent years, due to its excellent performance, it has received extensive attention. Silicon carbide, semi-insulated silicon carbide has a wide range of application prospects,is one of the most promising development material. Silicon carbide has many good properties, making it maintains a unique advantageous position.

The thermal conductivity of silicon carbide is more than 3 times than that of silicon, which can achieve better heat dissipation in electronic power and equipment. Silicon carbide has a higher breakdown voltage and can withstand a higher electric field before breakdown, thus achieving a higher voltage power device. Silicon carbide has excellent performance and high operating temperature. It can maintain performance at much higher temperatures than silicon, stable and reliable work, and the maximum operating temperature can reach 600 ° C. Silicon carbide has a lower on-resistance, high breakdown voltage and wider band gap allowing it to reduce resistance in power switches.

Semi-insulated silicon carbide (semi SiC) is a special kind of silicon carbide material. With high resistivity, high breakdown voltage, high thermal conductivity, strong anti-radiation ability and other superior performance. It is a very valuable new functional semiconductor material, with its unique electrical, thermal and radiation resistance properties, semi-insulated silicon carbide has broad application prospects in high power, high frequency, high temperature and other fields.

Semi silicon carbide wafer's showcase

Silicon carbide wafer's parameter

Silicon carbide is a semiconductor compound composed of silicon and carbon, belonging to the wide band gap material. The physical bonds are very strong, which gives silicon carbide semiconductors high mechanical, chemical and thermal stability. The wideband gap characteristics and high thermal stability allow SIC devices to be used at higher junction temperatures than silicon. It can be used to polish semi-insulated silicon carbide semiconductor wafers on both sides. For example, the process parameters of 4-inch silicon carbide semiconductor wafers are as follows:

Semi-insulated semiconductor silicon carbide wafer parameters

Q&A

1.What is silicon carbide semiconductor used for?

A wide bandgap (WBG) material can move electrical energy more efficiently than smaller bandgap semiconductors. This makes silicon carbide especially useful for power electronics like traction inverters in electric vehicles and DC/DC converters for electric vehicle chargers and air conditioners.

2.What is the difference between SI and SiC?

Silicon-carbide-based (SiC) MOSFETs allow for much greater efficiency levels compared to silicon-based (Si) versions, although it is not always easy to decide when this technology is the better choice.

3.Why is SiC better than silicon?

The thermal conductivity of SiC is nearly 3.5 times better than Si, allowing it to dissipate more power (heat) per unit area. While packaging can be a limiting factor during continuous operation, the significant extra margin offered by SiC brings added confidence in applications susceptible to transient thermal events.