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Silicon on Insulator SOI Wafer 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron Doped )

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    Buy cheap Silicon on Insulator SOI Wafer 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron Doped ) from wholesalers
     
    Buy cheap Silicon on Insulator SOI Wafer 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron Doped ) from wholesalers
    • Buy cheap Silicon on Insulator SOI Wafer 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron Doped ) from wholesalers
    • Buy cheap Silicon on Insulator SOI Wafer 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron Doped ) from wholesalers
    • Buy cheap Silicon on Insulator SOI Wafer 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron Doped ) from wholesalers
    • Buy cheap Silicon on Insulator SOI Wafer 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron Doped ) from wholesalers
    • Buy cheap Silicon on Insulator SOI Wafer 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron Doped ) from wholesalers

    Silicon on Insulator SOI Wafer 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron Doped )

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    Brand Name : ZMSH
    Model Number : SOI wafer
    Payment Terms : T/T
    Delivery Time : 2-4 weeks
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    Silicon on Insulator SOI Wafer 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron Doped )

    Silicon-on-Insulator SOI wafer 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron doped )

    Silicon-on-Insulator (SOI) Wafer Abstract

    This Silicon-on-Insulator (SOI) wafer is a specialized semiconductor substrate designed for advanced electronic and microelectromechanical systems (MEMS) applications. The wafer is characterized by a multi-layer structure that enhances device performance, reduces parasitic capacitance, and improves thermal isolation, making it an ideal choice for a wide range of high-performance and high-precision applications.

    Silicon on Insulator SOI Wafer 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron Doped )Silicon on Insulator SOI Wafer 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron Doped )

    Silicon-on-Insulator (SOI) Wafer Product Properties

    Wafer Specifications:

    • Wafer Diameter: 6 inches (150 mm)
      • The 6-inch diameter provides a large surface area for device fabrication, improving manufacturing efficiency and reducing production costs.

    Device Layer:

    • Thickness: 2.5 micrometers
      • The thin device layer allows for precise control of electronic properties, essential for high-speed and high-performance applications.
    • Doping: P-type (Phosphorus-doped)
      • Phosphorus doping enhances the electrical conductivity of the device layer, making it suitable for various p-type semiconductor devices.

    Buried Oxide (BOX) Layer:

    • Thickness: 1.0 micrometer
      • The 1.0 μm thick SiO2 layer provides excellent electrical isolation between the device layer and the handle wafer, reducing parasitic capacitance and improving signal integrity.

    Handle Wafer:

    • Thickness: 625 micrometers
      • The thick handle wafer ensures mechanical stability during fabrication and operation, preventing warping or breakage.
    • Type: P-type (Boron-doped)
      • Boron doping improves the mechanical strength and thermal conductivity of the handle wafer, aiding in heat dissipation and enhancing overall device reliability.
    Device Layer
    Diameter: 6"
    Type/Dopant: N type/P-doped
    Orientation: <1-0-0>+/-.5 degree
    Thickness: 2.5±0.5µm
    Resistivity: 1-4 ohm-cm
    Finish: Front Side Polished

    Buried Thermal Oxide:

    Thickness: 1.0um +/- 0.1 um

    Handle Wafers:

    Type/Dopant P Type, B doped
    Orientation <1-0-0>+/-.5 degree
    Resistivity: 10-20 ohm-cm
    Thickness: 625 +/- 15 um
    Finish: As-received (not polished)

    Key Product Properties:

    1. High-Quality Device Layer:

      • Carrier Mobility: High carrier mobility in the phosphorus-doped layer ensures fast electronic response and high-speed operation.
      • Low Defect Density: The high-quality fabrication process ensures minimal defects, leading to better performance and higher yields.
    2. Efficient Electrical Isolation:

      • Low Parasitic Capacitance: The BOX layer effectively isolates the device layer from the substrate, reducing parasitic capacitance and crosstalk, crucial for high-frequency and low-power applications.
      • Signal Integrity: Enhanced electrical isolation helps maintain signal integrity, which is essential for high-precision analog and digital circuits.
    3. Thermal Management:

      • Thermal Conductivity: The boron-doped handle wafer provides good thermal conductivity, aiding in the dissipation of heat generated during device operation, thus preventing overheating and ensuring stable performance.
      • Heat Resistance: The wafer's structure and materials ensure it can withstand high temperatures during processing and operation.
    4. Mechanical Stability:

      • Robustness: The thick handle wafer provides mechanical support, ensuring the wafer remains stable during the fabrication process and under operational stresses.
      • Durability: The mechanical stability of the handle wafer helps prevent damage, reducing the risk of wafer breakage and improving overall device longevity.
    5. Versatility in Applications:

      • High-Performance Computing: Suitable for processors and other high-speed digital logic circuits, thanks to its high carrier mobility and low parasitic capacitance.
      • 5G Communication: Ideal for RF components and high-frequency signal processing, benefiting from the excellent electrical isolation and thermal management properties.
      • MEMS Devices: Perfect for MEMS fabrication, offering the mechanical stability and precision needed for microfabricated structures.
      • Analog and Mixed-Signal Circuits: The low noise and reduced crosstalk make it suitable for high-precision analog circuits.
      • Power Electronics: The robust thermal and mechanical properties make it suitable for power management applications requiring high efficiency and reliability.

    Conclusion

    This Silicon-on-Insulator (SOI) wafer offers a unique combination of high-quality materials and advanced fabrication techniques, resulting in a substrate that excels in electrical performance, thermal management, and mechanical stability. These properties make it an ideal choice for a wide range of high-performance electronic and MEMS applications, supporting the development of next-generation semiconductor devices.

    Silicon-on-Insulator (SOI) Wafer Product photos

    Silicon on Insulator SOI Wafer 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron Doped )Silicon on Insulator SOI Wafer 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron Doped )

    Silicon on Insulator SOI Wafer 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron Doped )

    Q&A

    What Are SOI Wafers (Silicon-On-Insulator Wafers)?

    Silicon-On-Insulator (SOI) wafers are a type of semiconductor substrate that consist of multiple layers, including a thin silicon device layer, an insulating oxide layer, and a supporting silicon handle wafer. This structure enhances the performance of semiconductor devices by providing better electrical isolation, reducing parasitic capacitance, and improving thermal management.

    Product Tags:

    625um SOI wafer

      

    P-doped SOI wafer

      
    Quality Silicon on Insulator SOI Wafer 6&quot;, 2.5 &quot;m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron Doped ) for sale
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