Silicon-on-Insulator SOI wafer 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron doped )
Silicon-on-Insulator (SOI) Wafer Abstract
This Silicon-on-Insulator (SOI) wafer is a specialized semiconductor substrate designed for advanced electronic and microelectromechanical systems (MEMS) applications. The wafer is characterized by a multi-layer structure that enhances device performance, reduces parasitic capacitance, and improves thermal isolation, making it an ideal choice for a wide range of high-performance and high-precision applications.


Silicon-on-Insulator (SOI) Wafer Product Properties
Wafer Specifications:
- Wafer Diameter: 6 inches (150 mm)
- The 6-inch diameter provides a large surface area for device fabrication, improving manufacturing efficiency and reducing production costs.
Device Layer:
- Thickness: 2.5 micrometers
- The thin device layer allows for precise control of electronic properties, essential for high-speed and high-performance applications.
- Doping: P-type (Phosphorus-doped)
- Phosphorus doping enhances the electrical conductivity of the device layer, making it suitable for various p-type semiconductor devices.
Buried Oxide (BOX) Layer:
- Thickness: 1.0 micrometer
- The 1.0 μm thick SiO2 layer provides excellent electrical isolation between the device layer and the handle wafer, reducing parasitic capacitance and improving signal integrity.
Handle Wafer:
- Thickness: 625 micrometers
- The thick handle wafer ensures mechanical stability during fabrication and operation, preventing warping or breakage.
- Type: P-type (Boron-doped)
- Boron doping improves the mechanical strength and thermal conductivity of the handle wafer, aiding in heat dissipation and enhancing overall device reliability.
Device Layer |
Diameter: | | 6" |
Type/Dopant: | | N type/P-doped |
Orientation: | | <1-0-0>+/-.5 degree |
Thickness: | | 2.5±0.5µm |
Resistivity: | | 1-4 ohm-cm |
Finish: | | Front Side Polished |
Buried Thermal Oxide: |
Thickness: | | 1.0um +/- 0.1 um |
Handle Wafers: |
Type/Dopant | | P Type, B doped |
Orientation | | <1-0-0>+/-.5 degree |
Resistivity: | | 10-20 ohm-cm |
Thickness: | | 625 +/- 15 um |
Finish: | | As-received (not polished) |
Key Product Properties:
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High-Quality Device Layer:
- Carrier Mobility: High carrier mobility in the phosphorus-doped layer ensures fast electronic response and high-speed operation.
- Low Defect Density: The high-quality fabrication process ensures minimal defects, leading to better performance and higher yields.
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Efficient Electrical Isolation:
- Low Parasitic Capacitance: The BOX layer effectively isolates the device layer from the substrate, reducing parasitic capacitance and crosstalk, crucial for high-frequency and low-power applications.
- Signal Integrity: Enhanced electrical isolation helps maintain signal integrity, which is essential for high-precision analog and digital circuits.
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Thermal Management:
- Thermal Conductivity: The boron-doped handle wafer provides good thermal conductivity, aiding in the dissipation of heat generated during device operation, thus preventing overheating and ensuring stable performance.
- Heat Resistance: The wafer's structure and materials ensure it can withstand high temperatures during processing and operation.
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Mechanical Stability:
- Robustness: The thick handle wafer provides mechanical support, ensuring the wafer remains stable during the fabrication process and under operational stresses.
- Durability: The mechanical stability of the handle wafer helps prevent damage, reducing the risk of wafer breakage and improving overall device longevity.
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Versatility in Applications:
- High-Performance Computing: Suitable for processors and other high-speed digital logic circuits, thanks to its high carrier mobility and low parasitic capacitance.
- 5G Communication: Ideal for RF components and high-frequency signal processing, benefiting from the excellent electrical isolation and thermal management properties.
- MEMS Devices: Perfect for MEMS fabrication, offering the mechanical stability and precision needed for microfabricated structures.
- Analog and Mixed-Signal Circuits: The low noise and reduced crosstalk make it suitable for high-precision analog circuits.
- Power Electronics: The robust thermal and mechanical properties make it suitable for power management applications requiring high efficiency and reliability.
Conclusion
This Silicon-on-Insulator (SOI) wafer offers a unique combination of high-quality materials and advanced fabrication techniques, resulting in a substrate that excels in electrical performance, thermal management, and mechanical stability. These properties make it an ideal choice for a wide range of high-performance electronic and MEMS applications, supporting the development of next-generation semiconductor devices.
Silicon-on-Insulator (SOI) Wafer Product photos



Q&A
What Are SOI Wafers (Silicon-On-Insulator Wafers)?
Silicon-On-Insulator (SOI) wafers are a type of semiconductor substrate that consist of multiple layers, including a thin silicon device layer, an insulating oxide layer, and a supporting silicon handle wafer. This structure enhances the performance of semiconductor devices by providing better electrical isolation, reducing parasitic capacitance, and improving thermal management.
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