SiC Epitaxial Wafer Overview
8-inch (200 mm) SiC Epitaxial Wafers are now emerging as the most
advanced form factor in the SiC industry. Representing the cutting
edge of material science and manufacturing capability, 8” SiC
epitaxial wafers offer unparalleled opportunities for scaling up
power device production while driving down the cost per device.
As demand for electric vehicles, renewable energy, and industrial
power electronics continues to surge globally, 8” wafers are
enabling a new generation of SiC MOSFETs, diodes, and integrated
power modules with higher throughput, better yield, and lower
manufacturing costs.
With wide bandgap properties, high thermal conductivity, and
exceptional breakdown voltage, 8” SiC wafers are unlocking new
levels of performance and efficiency in advanced power electronics.
How 8” SiC Epitaxial Wafers Are Made
Manufacturing 8” SiC epitaxial wafers requires next-generation CVD
reactors, precise crystal growth control, and ultra-flat substrate
technology:
Substrate Fabrication
Monocrystalline 8” SiC substrates are produced via high-temperature
sublimation techniques and subsequently polished to sub-nanometer
roughness.
CVD Epitaxial Growth
Advanced large-scale CVD tools operate at ~1600 °C to deposit
high-quality SiC epitaxial layers onto the 8” substrates, with
optimized gas flow and temperature uniformity to handle the larger
area.
Tailored Doping
N-type or P-type doping profiles are created with high uniformity
across the entire 300 mm wafer.
Precision Metrology
Uniformity control, crystal defect monitoring, and in-situ process
management ensure consistency from wafer center to edge.
Comprehensive Quality Assurance
Each wafer is validated via:
AFM, Raman, and XRD
Full-wafer defect mapping
Surface roughness and warp analysis
Electrical property measurements
Specifications
| Grade | | 8InchN-typeSiCSubstrate |
| 1 | Polytype | -- | 4HSiC |
| 2 | ConductivityType | -- | N |
| 3 | Diameter | mm | 200.00±0.5mm |
| 4 | Thickness | um | 700±50µm |
| 5 | CrystalSurfaceOrientationAxis | degree | 4.0°toward±0.5° |
| 6 | Notchdepth | mm | 1~1.25mm |
| 7 | Notchorientation | degree | ±5° |
| 8 | Resistivity(Average) | Ωcm | NA |
| 9 | TTV | um | NA |
| 10 | LTV | um | NA |
| 11 | Bow | um | NA |
| 12 | Warp | um | NA |
| 13 | MPD | cm-2 | NA |
| 14 | TSD | cm-2 | NA |
| 15 | BPD | cm-2 | NA |
| 16 | TED | cm-2 | NA |
| 17 | EPD | cm-2 | NA |
| 18 | ForeignPolytypes | -- | NA |
| 19 | SF(BSF)(2x2mmgridsize) | % | NA |
| 20 | TUA(TotalUsableArea)(2x2mmgridsize) | % | NA |
| 21 | NominalEdgeExclusion | mm | NA |
| 22 | Visualscratches | -- | NA |
| 23 | Scratches-cumulativelength(SiSurface) | mm | NA |
| 24 | SiFace | -- | CMPpolished |
| 25 | CFace | -- | CMPpolished |
| 26 | Surfaceroughness(Siface) | nm | NA |
| 27 | Surfaceroughness(Cface) | nm | NA |
| 28 | lasermarking | -- | CFace,abovetheNotch |
| 29 | Edgechip(Front&backSurfaces) | -- | NA |
| 30 | Hexplates | -- | NA |
| 31 | Cracks | -- | NA |
| 32 | Particle(≥0.3um) | -- | NA |
| 33 | Areacontamination(stains) | -- | None:Bothfaces |
| 34 | ResidualMetalsContamination(ICP-MS) | atom/cm2 | NA |
| 35 | EdgeProfile | -- | Chamfer,R-Shape |
| 36 | Packaging | -- | Multi-waferCassetteOrSingleWaferContainer |
Applications
8” SiC epitaxial wafers enable mass production of reliable power
devices in sectors including:
Electric Vehicles (EVs)
Traction inverters, onboard chargers, and DC/DC converters.
Renewable Energy
Solar string inverters, wind power converters.
Industrial Drives
Efficient motor drives, servo systems.
5G / RF Infrastructure
Power amplifiers and RF switches.
Consumer Electronics
Compact, high-efficiency power supplies.
Frequently Asked Questions (FAQ)
1. What is the benefit of 8” SiC wafers?
They significantly reduce production cost per chip through
increased wafer area and process yield.
2. How mature is 8” SiC production?
8” is entering pilot production with select industry leaders—our
wafers are available now for R&D and volume ramp.
3. Can doping and thickness be customized?
Yes, full customization of doping profile and epi thickness is
available.
4. Are existing fabs compatible with 8” SiC wafers?
Minor equipment upgrades are needed for full 8” compatibility.
5. What is typical lead time?
6–10 weeks for initial orders; shorter for repeat volumes.
6. What industries will adopt 8” SiC fastest?
Automotive, renewable energy, and grid infrastructure sectors.
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P-type Doping
