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6-INCH CONDUCTIVE SINGLE-CRYSTAL SIC ON POLYCRYSTALLINE SIC COMPOSITE SUBSTRATE

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    Buy cheap 6-INCH CONDUCTIVE SINGLE-CRYSTAL SIC ON POLYCRYSTALLINE SIC COMPOSITE SUBSTRATE from wholesalers
     
    Buy cheap 6-INCH CONDUCTIVE SINGLE-CRYSTAL SIC ON POLYCRYSTALLINE SIC COMPOSITE SUBSTRATE from wholesalers
    • Buy cheap 6-INCH CONDUCTIVE SINGLE-CRYSTAL SIC ON POLYCRYSTALLINE SIC COMPOSITE SUBSTRATE from wholesalers
    • Buy cheap 6-INCH CONDUCTIVE SINGLE-CRYSTAL SIC ON POLYCRYSTALLINE SIC COMPOSITE SUBSTRATE from wholesalers
    • Buy cheap 6-INCH CONDUCTIVE SINGLE-CRYSTAL SIC ON POLYCRYSTALLINE SIC COMPOSITE SUBSTRATE from wholesalers
    • Buy cheap 6-INCH CONDUCTIVE SINGLE-CRYSTAL SIC ON POLYCRYSTALLINE SIC COMPOSITE SUBSTRATE from wholesalers
    • Buy cheap 6-INCH CONDUCTIVE SINGLE-CRYSTAL SIC ON POLYCRYSTALLINE SIC COMPOSITE SUBSTRATE from wholesalers

    6-INCH CONDUCTIVE SINGLE-CRYSTAL SIC ON POLYCRYSTALLINE SIC COMPOSITE SUBSTRATE

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    6-INCH CONDUCTIVE SINGLE-CRYSTAL SIC ON POLYCRYSTALLINE SIC COMPOSITE SUBSTRATE

    The 6-inch Conductive Single-Crystal SiC on Polycrystalline SiC Composite Substrate


    Abstract of the 6-inch Conductive Single-Crystal SiC on Polycrystalline SiC Composite Substrate


    The 6-INCH CONDUCTIVE SINGLE-CRYSTAL SIC ON POLYCRYSTALLINE SIC COMPOSITE SUBSTRATE6-inch conductive single-crystal SiC on polycrystalline SiC composite substrate is a new type of semiconductor substrate structure.


    Its core lies in bonding or epitaxially growing a single-crystal conductive SiC thin film onto a polycrystalline silicon carbide (SiC) substrate. This structure combines the high performance of single-crystal SiC (such as high carrier mobility and low defect density) with the low cost and large-size advantages of polycrystalline SiC substrates.


    It is suitable for manufacturing high-power, high-frequency devices and is particularly competitive in cost-effective applications. Compared to traditional single-crystal SiC substrates, polycrystalline SiC substrates are prepared via sintering processes, which lowers the cost and allows for larger sizes (such as 6 inches), but their crystal quality is poorer and not suitable for high-performance devices directly.


    Attribute Table, Technical Features, and Advantages of The 6-inch Conductive Single-Crystal SiC on Polycrystalline SiC Composite Substrate


    Attribute Table


    ItemSpecification
    Product TypeSingle-Crystal SiC Epitaxial Wafer (Composite Substrate)
    Wafer Size6 inches (150 mm)
    Substrate TypePolycrystalline SiC Composite
    Substrate Thickness400–600 µm
    Substrate Resistivity<0.02 Ω·cm (Conductive Type)
    Polycrystalline Grain Size50–200 µm
    Epitaxial Layer Thickness5–15 µm (customizable)
    Epitaxial Layer Doping TypeN-type / P-type
    Carrier Concentration (Epi)1×10¹⁵ – 1×10¹⁹ cm⁻³ (optional)
    Epitaxial Surface Roughness<1 nm (AFM, 5 µm × 5 µm)
    Surface Orientation4° off-axis (4H-SiC) or optional
    Crystal Structure4H-SiC or 6H-SiC Single Crystal
    Threading Screw Dislocation Density (TSD)<5×10⁴ cm⁻²
    Basal Plane Dislocation Density (BPD)<5×10³ cm⁻²
    Step-Flow MorphologyClear and Regular
    Surface TreatmentPolished (Epi-ready)
    PackagingSingle wafer container, vacuum-sealed

    Technical Features, and Advantages


    High Conductivity:

    Single-crystal SiC films achieve low resistivity (<10⁻³ Ω·cm) through doping (e.g., nitrogen doping for n-type), fulfilling low-loss requirements for power devices.


    High Thermal Conductivity:

    SiC has more than three times the thermal conductivity of silicon, enabling effective heat dissipation suitable for high-temperature environments such as EV inverters.


    High-Frequency Characteristics:

    The high electron mobility of single-crystal SiC supports high-frequency switching, including 5G RF devices. Cost and Structural Innovations


    Cost Reduction via Polycrystalline Substrates:

    Polycrystalline SiC substrates are produced by powder sintering, costing only about 1/5 to 1/3 of single-crystal substrates, and scalable to 6 inches or larger sizes.


    Heterogeneous Bonding Technology:

    High-temperature and high-pressure bonding processes achieve atomic-level bonding between single-crystal SiC and the polycrystalline substrate interfaces, avoiding defects common in traditional epitaxial growth.


    Improved Mechanical Strength:

    The high toughness of polycrystalline substrates compensates for the brittleness of single-crystal SiC, enhancing device reliability.


    Physical image display

    6-INCH CONDUCTIVE SINGLE-CRYSTAL SIC ON POLYCRYSTALLINE SIC COMPOSITE SUBSTRATE6-INCH CONDUCTIVE SINGLE-CRYSTAL SIC ON POLYCRYSTALLINE SIC COMPOSITE SUBSTRATE


    Fabrication Process of the 6-inch Conductive Single-Crystal SiC on Polycrystalline SiC Composite Substrate


    Polycrystalline SiC Substrate Preparation:

    Silicon carbide powder is formed into polycrystalline substrates (~6 inches) via high-temperature sintering.


    Single-Crystal SiC Film Growth:

    Single-crystal SiC layers are epitaxially grown on the polycrystalline substrate using chemical vapor deposition (CVD) or physical vapor transport (PVT).


    Bonding Technology:

    Atomic-level bonding at single-crystal and polycrystalline interfaces is achieved via metal bonding (e.g., silver paste) or direct bonding (DBE).


    Annealing Treatment:

    High-temperature annealing optimizes interface quality and reduces contact resistance.


    Core Application Areas of the 6-inch Conductive Single-Crystal SiC on Polycrystalline SiC Composite Substrate



    New Energy Vehicles

    - Main Inverters: Conductive single-crystal SiC MOSFETs improve inverter efficiency (reducing losses by 5% to 10%) and reduce size and weight. - On-Board Chargers (OBC): High-frequency switching characteristics shorten charging times and support 800V high-voltage platforms.



    Industrial Power Supply and Photovoltaics

    - High-Frequency Inverters: Achieve higher conversion efficiency (>98%) in PV systems, reducing overall system cost.

    - Smart Grids: Reduce energy losses in high-voltage direct current (HVDC) transmission modules.


    Aerospace and Defense

    - Radiation-Hard Devices: Single-crystal SiC’s radiation resistance suits satellite power management modules.

    - Engine Sensors: High-temperature tolerance (>300°C) simplifies cooling system design.


    RF and Communications

    - 5G Millimeter Wave Devices: Single-crystal SiC-based GaN HEMTs provide high-frequency and high-power output.

    - Satellite Communications: Polycrystalline substrates’ vibration resistance adapt to harsh space environments.


    Q&A


    Q:How conductive is a 6-inch conductive single-crystal SiC on a polycrystalline SiC composite substrate?


    A:Source of Conductivity: The conductivity of single-crystal SiC is mainly achieved by doping with other elements (such as nitrogen or aluminum). The doping type can be n-type or p-type, resulting in different electrical conductivities and carrier concentrations.


    Influence of Polycrystalline SiC: Polycrystalline SiC typically exhibits lower conductivity due to lattice defects and discontinuities affecting its conductive properties. Therefore, in a composite substrate, the polycrystalline portion may have some inhibiting effect on the overall conductivity.


    Advantages of the Composite Structure: Combining conductive single-crystal SiC with polycrystalline SiC can potentially improve the overall high-temperature resistance and mechanical strength of the material, while also achieving the desired conductivity through optimized design in certain applications.


    Application Potential: This composite structure is often used in high-power electronic devices and high-temperature environments because its excellent thermal and electrical conductivity make it suitable for operation under extreme conditions.


    Other Related Product Recommendations

    2/4/6/8 inch SiC wafer


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