Home > Semiconductor Substrate >

1inch 2inch Beta Coefficient Ga2O3 Gallium Oxide Wafer Substrate Dsp Ssp

Product Categories

Sapphire Substrate [89]
Synthetic Gem Stone [75]
Sapphire Optical Windows [86]
Silicon Carbide Wafer [104]
Sapphire Tube [62]
Gallium Nitride Wafer [25]
Semiconductor Substrate [103]
Scientific Lab Equipment [50]
Sapphire Crystal Watch Case [19]
Wafer Carrier Box [14]
Superconducting Thin Monocrystalline Substrate [13]
Ceramic Parts [7]

SHANGHAI FAMOUS TRADE CO.,LTD

Trust Seal

Verified Supplier

Credit Check

Supplier Assessment

Contact Now

1inch 2inch Beta Coefficient Ga2O3 Gallium Oxide Wafer Substrate Dsp Ssp

Ask Lasest Price
Brand Name :	ZMKJ
Model Number :	Beta Coefficient-Ga2O3
Price :	by case
Payment Terms :	T/T, Western Union, paypal
Supply Ability :	50pcs/month
Delivery Time :	in 30days

Add to Cart

Product Details
Company Profile

1inch 2inch Beta Coefficient Ga2O3 Gallium Oxide Wafer Substrate Dsp Ssp

Gallium Oxide Epiwafers Beta Coefficient-Ga2O3 Gallium Oxide Wafer Doped Mg Fe3+ Square Substrate Dsp Ssp

Gallium oxide (Ga2O3) has a large band-gap energy, and it can be grown from a melt source. As a result, large, high-quality single-crystal substrates can be manufactured at low cost. These characteristics make Ga2O3 a promising material for next-generation power electronics. It also has the high advantage of reducing the series resistance of the blue LED or UVB LED.

Properties of Ga2O3

β-Ga2O3 is a gallium oxide compound, which is a wide band gap semiconductor material. Its crystal structure belongs to the hexagonal crystal system, with high electron mobility and large band width, so it has a wide application prospect. Here are some details about β-Ga2O3:

Physical properties:

Crystal structure: hexagonal crystal system

Density: 5.88 g/cm³

Lattice constant: a = 0.121 nm, c = 0.499 nm

Melting point: 1725 °C

Refractive index: 1.9-2.5

Transparent wavelength range: 0.23-6.0μm

Electrical properties:

Band width: 4.8eV

Electron mobility: 200-600 cm²/Vs

Leakage rate: 10^ -5-10 ^-10 A/cm²

REDOX potential: 2.5V vs. NHE

The Application of Ga2O3

Because of its wide band gap and high electron mobility, β-Ga2O3 has a wide application prospect in power electronics, photoelectronics, solar cells and other fields. Specific applications include:

Ultraviolet detectors and lasers

High power MOSFETs and Schottky diodes

High temperature sensor and potential sensor

Solar cells and LED materials

β-Ga2O3 still faces some challenges in preparation and application, such as crystal growth, impurity control, device fabrication, etc. However, with the continuous development of technology, the application prospect of β-Ga2O3 is still very broad.

Gallium oxide, Ga2O3 single crystal		2inch substrates		10*15mm substrates
Orientation		(-201)	(-201)	(-201)	(010)	(010)	(010)
Dopant		Sn	Un-doped	Sn	Sn	Un-doped	Fe
Conductivity		n-type	n-type	n-type	n-type	n-type	Insulation(＞1010
Nd-Na(cm-3)		5E17~9E18	5E17 or less	5E17~9E18	1E18~9E18	1E17~5E17	-
Dimentions	A-B(mm)	50.8±0.3	50.8±0.3	15±0.3	15±0.3	15±0.3	15±0.3
	C-D(mm)	41~49.8	41~49.8	10±0.3	10±0.3	10±0.3	10±0.3
	Thickness	0.68±0.02	0.68±0.02	0.68±0.02	0.5±0.02	0.5±0.02	0.5±0.02
	Reference(m	Fig.1	Fig.1	Fig.2	Fig.3	Fig.3	Fig.3
Offset angle (degree)		[010]:0±0.4	[010]:0±0.4	[010]:0±0.4	丄[102]:0±1	丄[102]:0±1	丄[102]:0±1
Offset angle (degree)		[102]:0.7±0.4	[102]:0.7±0.4	[102]:0.7±0.4	[102]:0±1	[102]:0±1	[102]:0±1
FWHM(arcsec)		[010]:150 or less	[010]:150 or less	[010]:150 or less	丄[102]:150 or	丄[102]:150 or	丄[102]:150 or
FWHM(arcsec)		[102]:150 or less	[102]:150 or less	[102]:150 or less	[102]:150 or less	[102]:150 or less	[102]:150 or less
Surface	Front	CMP	CMP	CMP	CMP	CMP	CMP
Surface	Back	Rough	Rough	Rough	Rough	Rough	Rough

Item	Specification
Orientation	-100
Doped	UID		Mg		Fe
Electrical parameter	1 ×1017~3×1018cm-3		≥1010 Ω ·cm		≥1010 Ω ·cm
Twin-crystal swing curve half-height width	≤150

Dislocation density	＜1×10 5 cm-2
Dimension	A-B	C-D		厚度

	10mm	10.5mm		0.5(±0.02)mm
	5mm	10mm		0.5(±0.02)mm
Flatness	The long side is [010] Orientation
Surface	DSP/SSP
	Ra<0.5nm
	Mis<±1.

Product Tags:


*From:	Your email address is incorrect!
*To:	SHANGHAI FAMOUS TRADE CO.,LTD
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!