SiC Boule Growth Furnace PVT, HTCVD, and LPE Technologies for
Single Crystal SiC Boule Production
SiC Boule Growth Furnace's Abstract
ZMSH proudly offers the SiC Boule Growth Furnace, an advanced solution engineered for the production of single crystal SiC Boules. Utilizing cutting-edge technologies such as PVT (Physical Vapor Transport), HTCVD (High Temperature Chemical Vapor Deposition), and LPE (Liquid Phase Epitaxy), our SiC Boule Growth Furnace is optimized for the stable and efficient growth of high-purity SiC Boules. This furnace supports the production of 6-inch, 8-inch, and customized-size SiC Boules, meeting the stringent demands of power electronics, EVs, and
renewable energy systems.
SiC Boule Growth Furnace's Properties
- Multi-Technology Compatibility: The SiC Boule Growth Furnace supports PVT, HTCVD, and LPE processes, providing flexibility for
different SiC crystal growth methods.
- Precise Temperature Control: Advanced resistance or induction heating ensures uniform
temperature distribution, with control accuracy of ±1°C, essential
for defect-free SiC Boule growth.
- Vacuum and Pressure Control: Integrated high-precision vacuum and pressure systems maintain
optimal growth conditions, improving SiC Boule quality and yield.
- Crystal Size Support: Capable of growing 6-inch and 8-inch SiC Boules, with customization available for larger sizes.
- High Efficiency and Safety: The SiC Boule Growth Furnace is designed for energy efficiency, ease of operation, and safety,
with features such as bottom loading and automatic control systems.
- Stable Crystal Growth Environment: Ensures consistent growth conditions, reducing defect density and
enhancing the performance of final SiC wafers.
| Specification | Details |
|---|
| Dimensions (L × W × H) | 3200 × 1150 × 3600 mm |
| Crucible Diameter | Ø 400 mm |
| Ultimate Vacuum | 5 × 10⁻⁴ Pa (after 1.5 h pumping) |
| Rotation Shaft Diameter | Ø 200 mm |
| Furnace Height | 1250 mm |
| Heating Method | Induction heating |
| Max Temperature | 2400°C |
| Heating Power | Pmax = 40 kW, Frequency = 8–12 kHz |
| Temperature Measurement | Dual-color infrared pyrometer |
| Temperature Range | 900–3000°C |
| Temperature Accuracy | ±1°C |
| Pressure Range | 1–700 mbar |
| Pressure Control Accuracy | 1–10 mbar: ±0.5% F.S;
10–100 mbar: ±0.5% F.S;
700 mbar: ±0.5% F.S |
| Loading Mode | Bottom loading, safe and easy operation |
| Optional Features | Shaft rotation, dual temperature zones |
Three Types of SiC Boule Growth Furnace details
SiC Boule Growth Furnace's photo
SiC Boule from our Furnace
SiC Boule Growth Furnace’s Photo in Customers' Factory
Below is an installation of our SiC Boule Growth Furnace at a customer’s facility, demonstrating real-world application and
reliable performance in mass production environments. Our global
clients use the SiC Boule Growth Furnace for large-scale production of SiC wafers with outstanding consistency and quality.
Customizable Services for SiC Boule Growth Furnace
At ZMSH, we understand that each customer’s production needs are unique.
That’s why we offer fully customizable solutions for our SiC Boule Growth Furnace, ensuring optimal compatibility with your production processes,
technical requirements, and crystal growth goals.
