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SiC Boule Growth Furnace PVT HTCVD And LPE Technologies For Single Crystal SiC Boule Production

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    Buy cheap SiC Boule Growth Furnace PVT HTCVD And LPE Technologies For Single Crystal SiC Boule Production from wholesalers
     
    Buy cheap SiC Boule Growth Furnace PVT HTCVD And LPE Technologies For Single Crystal SiC Boule Production from wholesalers
    • Buy cheap SiC Boule Growth Furnace PVT HTCVD And LPE Technologies For Single Crystal SiC Boule Production from wholesalers
    • Buy cheap SiC Boule Growth Furnace PVT HTCVD And LPE Technologies For Single Crystal SiC Boule Production from wholesalers
    • Buy cheap SiC Boule Growth Furnace PVT HTCVD And LPE Technologies For Single Crystal SiC Boule Production from wholesalers
    • Buy cheap SiC Boule Growth Furnace PVT HTCVD And LPE Technologies For Single Crystal SiC Boule Production from wholesalers

    SiC Boule Growth Furnace PVT HTCVD And LPE Technologies For Single Crystal SiC Boule Production

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    Brand Name : ZMSH
    Model Number : SiC Boule growth furnace
    Payment Terms : T/T
    Delivery Time : 6-8 month
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    SiC Boule Growth Furnace PVT HTCVD And LPE Technologies For Single Crystal SiC Boule Production


    SiC Boule Growth Furnace PVT, HTCVD, and LPE Technologies for Single Crystal SiC Boule Production


    SiC Boule Growth Furnace's Abstract

    ZMSH proudly offers the SiC Boule Growth Furnace, an advanced solution engineered for the production of single crystal SiC Boules. Utilizing cutting-edge technologies such as PVT (Physical Vapor Transport), HTCVD (High Temperature Chemical Vapor Deposition), and LPE (Liquid Phase Epitaxy), our SiC Boule Growth Furnace is optimized for the stable and efficient growth of high-purity SiC Boules. This furnace supports the production of 6-inch, 8-inch, and customized-size SiC Boules, meeting the stringent demands of power electronics, EVs, and renewable energy systems.



    SiC Boule Growth Furnace's Properties

    • Multi-Technology Compatibility: The SiC Boule Growth Furnace supports PVT, HTCVD, and LPE processes, providing flexibility for different SiC crystal growth methods.
    • Precise Temperature Control: Advanced resistance or induction heating ensures uniform temperature distribution, with control accuracy of ±1°C, essential for defect-free SiC Boule growth.
    • Vacuum and Pressure Control: Integrated high-precision vacuum and pressure systems maintain optimal growth conditions, improving SiC Boule quality and yield.
    • Crystal Size Support: Capable of growing 6-inch and 8-inch SiC Boules, with customization available for larger sizes.
    • High Efficiency and Safety: The SiC Boule Growth Furnace is designed for energy efficiency, ease of operation, and safety, with features such as bottom loading and automatic control systems.
    • Stable Crystal Growth Environment: Ensures consistent growth conditions, reducing defect density and enhancing the performance of final SiC wafers.
      SpecificationDetails
      Dimensions (L × W × H)3200 × 1150 × 3600 mm
      Crucible DiameterØ 400 mm
      Ultimate Vacuum5 × 10⁻⁴ Pa (after 1.5 h pumping)
      Rotation Shaft DiameterØ 200 mm
      Furnace Height1250 mm
      Heating MethodInduction heating
      Max Temperature2400°C
      Heating PowerPmax = 40 kW, Frequency = 8–12 kHz
      Temperature MeasurementDual-color infrared pyrometer
      Temperature Range900–3000°C
      Temperature Accuracy±1°C
      Pressure Range1–700 mbar
      Pressure Control Accuracy1–10 mbar: ±0.5% F.S;
      10–100 mbar: ±0.5% F.S;
      700 mbar: ±0.5% F.S
      Loading ModeBottom loading, safe and easy operation
      Optional FeaturesShaft rotation, dual temperature zones



    Three Types of SiC Boule Growth Furnace details




    SiC Boule Growth Furnace's photo



    SiC Boule from our Furnace




    SiC Boule Growth Furnace’s Photo in Customers' Factory

    Below is an installation of our SiC Boule Growth Furnace at a customer’s facility, demonstrating real-world application and reliable performance in mass production environments. Our global clients use the SiC Boule Growth Furnace for large-scale production of SiC wafers with outstanding consistency and quality.





    Customizable Services for SiC Boule Growth Furnace

    At ZMSH, we understand that each customer’s production needs are unique. That’s why we offer fully customizable solutions for our SiC Boule Growth Furnace, ensuring optimal compatibility with your production processes, technical requirements, and crystal growth goals.

    Quality SiC Boule Growth Furnace PVT HTCVD And LPE Technologies For Single Crystal SiC Boule Production for sale
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