SiC Ingot growth Furnace PVT HTCVD LPE single crystal SiC Boule
growth furnace for 6inch 8inch SiC wafers product
SiC Ingot growth Furnace's abstract
The SiC Ingot Growth Furnace is an advanced system engineered for the high-efficiency growth of
single crystal SiC Boules used in the production of 6-inch and 8-inch SiC wafers. Utilizing versatile growth methods including PVT (Physical Vapor Transport), HTCVD (High Temperature Chemical Vapor Deposition), and LPE (Liquid Phase Epitaxy), this furnace ensures optimal conditions for the formation of high-purity, low-defect SiC ingots.
With precision control over temperature, pressure, and vacuum, the SiC Ingot Growth Furnace enables stable and scalable SiC Boule growth, meeting the demands of next-generation semiconductor applications such as electric vehicles (EVs), renewable energy, and high-power
electronics. Its modular, customizable design allows manufacturers
to adapt to various production scales and crystal specifications
while ensuring consistent ingot quality and yield.
SiC Ingot growth Furnace's data
| Parameter | Value |
|---|
| Crystal Size | 6–8 inches |
| Heating Method | Induction / Resistance Heating |
| Wire Installation & Movement Accuracy (mm) | ±0.5 mm |
| Chamber Material & Cooling Method | Water Cooling / Air Cooling |
| Temperature Control Accuracy | ±0.5°C |
| Pressure Control Accuracy | < 5 ± 0.05 mbar |
| Ultimate Vacuum | 5 × 10⁻⁶ mbar |
| Pressure Rise Rate | < 5 Pa/12 h |
Growth Theory
1. PVT (Physical Vapor Transport) Method – Growth Principle
In the PVT method, silicon carbide (SiC) crystals are grown through sublimation and condensation. At high temperatures (2000–2500°C), SiC powder sublimates (turns from solid to vapor) inside a vacuum or
low-pressure environment. This SiC vapor is transported through a controlled temperature gradient and deposits onto a seed crystal, where it condenses and grows into a single crystal, known as a SiC Boule.
- Key Features:
- Crystal growth by vapor phase transport.
- Requires precise control of temperature gradient and pressure.
- Used for producing bulk single crystal SiC Boules for wafer slicing
2. Resistance Heating – Growth Support Principle
In resistance heating, electrical current passes through a resistive heating element (e.g., graphite), generating heat that raises the temperature of
the growth chamber and SiC source material. This heating method is used to maintain the high and stable
temperatures needed for the PVT process.
- Key Features:
- Indirect heating method: heat is transferred from the heater to the crucible.
- Provides uniform and controlled heating.
- Suitable for medium-scale production with stable energy consumption.
SiC Ingot growth Furnace's Photo
Our SiC sulotion result
At ZMSH, the SiC Boules produced using our advanced SiC Ingot Growth Furnace offer significant advantages in both crystal quality and process compatibility, ensuring they fully meet the stringent demands of modern semiconductor manufacturing.
Key Advantages:
High Crystal Purity: Our SiC Boules are grown under tightly controlled conditions,
achieving exceptional purity and minimal contamination, critical
for high-performance semiconductor devices.
Low Defect Density: With precise control of temperature, vacuum, and pressure during
growth, our SiC Boules exhibit low dislocation densities and minimal micropipes, ensuring superior electrical properties
and device yield.
Uniform Crystal Structure: Consistent crystallinity across the entire boule, enabling
efficient slicing and wafer fabrication with uniform thickness and material quality.
Fully Compatible with Semiconductor Processes: Our SiC Boules are engineered to align with industry-standard wafering, polishing, and epitaxial growth processes, guaranteeing smooth integration into downstream device fabrication workflows.
Scalable Production for 6-inch and 8-inch Wafers: Suitable for volume production of 6-inch and 8-inch SiC wafers, meeting the growing market demand for power electronics, EVs, and
high-frequency applications.
Our survice
At ZMSH, we offer customizable services to meet the diverse needs of our clients in SiC Boule production. From equipment configuration to process support, we ensure that
every solution aligns perfectly with your production goals and
technical requirements.
What We Offer:
Tailored Equipment Design: We customize the SiC Boule Growth Furnace specifications—including crystal size (6-inch, 8-inch, or custom),
heating method (induction/resistance), and control systems—to fit
your specific production needs.
Process Parameter Customization: We help optimize temperature, pressure, and vacuum parameters
based on your desired crystal quality, ensuring stable and
efficient growth of SiC Boules.
On-Site Installation & Commissioning: Our expert team provides on-site installation, calibration, and system integration to ensure your equipment
operates at peak performance from day one.
Customer Training: We offer comprehensive technical training for your staff, covering operation, maintenance, and
troubleshooting of the furnace, to ensure confident and efficient
use.
After-Sales Support: ZMSH provides long-term after-sales service, including remote assistance, periodic maintenance, and fast
response repair services to minimize downtime.
