SiC Single crystal resistance heating crystal growth furnace for
6inch 8inch 12inch SiC wafers manufacture
SiC single crystal growth furnace's abstract
ZMSH is proud to offer the SiC single crystal growth furnace, a
state-of-the-art solution for high-quality SiC wafer manufacturing.
Our furnace is designed to efficiently grow SiC single crystals in
sizes of 6-inch, 8-inch, and 12-inch, meeting the growing demands
in industries such as electric vehicles (EVs), renewable energy,
and high-power electronics.
SiC single crystal growth furnace's properties
- Advanced Resistance Heating Technology: The SiC single crystal
growth furnace utilizes cutting-edge resistance heating technology,
ensuring uniform temperature distribution and high-quality crystal
growth.
- Temperature Control Accuracy: Achieves precise temperature
regulation with a tolerance of ±1°C across the crystal growth
process.
- Versatile Applications: Capable of growing SiC crystals for wafers
up to 12 inches, enabling the production of larger,
high-performance wafers for next-gen power devices.
- Vacuum and Pressure Management: The furnace is equipped with an
advanced vacuum and pressure control system, maintaining optimal
conditions for crystal growth, reducing defect rates, and improving
yield.
| No. | Specification | Details |
|---|
| 1 | Model | PVT-RS-40 |
| 2 | Dimensions (L × W × H) | 2500 × 2400 × 3456 mm |
| 3 | Crucible Diameter | 900 mm |
| 4 | Ultimate Vacuum Pressure | 6 × 10⁻⁴ Pa (after 1.5h of vacuum) |
| 5 | Leakage Rate | ≤5 Pa/12h (bake-out) |
| 6 | Rotation Shaft Diameter | 50 mm |
| 7 | Rotation Speed | 0.5–5 rpm |
| 8 | Heating Method | Electric resistance heating |
| 9 | Maximum Furnace Temperature | 2500°C |
| 10 | Heating Power | 40 kW × 2 × 20 kW |
| 11 | Temperature Measurement | Dual-color infrared pyrometer |
| 12 | Temperature Range | 900–3000°C |
| 13 | Temperature Accuracy | ±1°C |
| 14 | Pressure Range | 1–700 mbar |
| 15 | Pressure Control Accuracy | 1–10 mbar: ±0.5% F.S;
10–100 mbar: ±0.5% F.S;
100–700 mbar: ±0.5% F.S |
| 16 | Operation Type | Bottom loading, manual/automatic safety options |
| 17 | Optional Features | Dual temperature measurement, multiple heating zones |
SiC single crystal growth furnace's result
Perfect Crystal Growth
The core strength of our SiC single crystal growth furnace lies in
its ability to produce high-quality, defect-free SiC crystals. With
precise temperature control, advanced vacuum management, and
state-of-the-art resistance heating technology, we ensure that each
crystal grown is flawless, with minimal defect density. This
perfection is essential for meeting the rigorous demands of
semiconductor applications where even the slightest imperfection
can affect the performance of the final device.
Meeting Semiconductor Standards
The SiC wafers grown in our furnace exceed industry standards for
both performance and reliability. The crystal structures exhibit
exceptional uniformity, with low dislocation densities and high
electrical conductivity, making them ideal for high-power,
high-frequency semiconductor devices. These qualities are critical
for the next-generation power devices, including those used in
electric vehicles (EVs), renewable energy systems, and
telecommunication equipment.
ZMSH survice
ZMSH: Customizable SiC Single Crystal Growth Furnace with Full
Support
At ZMSH, we provide advanced SiC single crystal growth furnaces
tailored to meet your specific needs. Our customization options
ensure the furnace is perfectly suited for your production
requirements, helping you achieve high-quality SiC crystals.
On-Site Installation & Setup
Our team will handle on-site installation, ensuring the furnace is
integrated and running efficiently at your facility. We prioritize
smooth setup to minimize downtime and optimize your production
process.
Comprehensive Customer Training
We offer thorough customer training, covering furnace operation,
maintenance, and troubleshooting. Our goal is to equip your team
with the knowledge to operate the furnace effectively and achieve
optimal crystal growth.
After-Sales Maintenance
ZMSH provides reliable after-sales support, including maintenance
and repair services to ensure your furnace remains in top
condition. Our team is always available to minimize downtime and
support your continued success.
Q&A
Q；What is the crystal growth of silicon carbide?
A:Silicon carbide (SiC) crystal growth involves the process of
creating high-quality SiC crystals through methods like Czochralski
or Physical Vapor Transport (PVT), essential for power
semiconductor devices.
Key wods:SiC Single Crystal Growth Furnace SiC Crystals Semiconductor DevicesCrystal Growth Technology
