Silicon carbide monocrystalline growth furnace resistance method 6
8 12inch SiC ingot growth furnace
ZMSH SiC Single Crystal Growth Furnace: Precision Engineered for
High-Quality SiC Wafers
ZMSH proudly introduces its SiC single crystal growth furnace, an
advanced solution engineered for high-performance SiC wafer
manufacturing. Our furnace efficiently produces SiC single crystals
in 6-inch, 8-inch, and 12-inch sizes, meeting the growing needs of
industries such as electric vehicles (EVs), renewable energy, and
high-power electronics.
Properties of SiC Single Crystal Growth Furnace
- Advanced Resistance Heating Technology: The furnace uses
state-of-the-art resistance heating technology to ensure uniform
temperature distribution and optimal crystal growth.
- Temperature Control Precision: Achieves temperature regulation with
a tolerance of ±1°C throughout the entire crystal growth process.
- Versatile Applications: Capable of growing SiC crystals for wafers
up to 12 inches, enabling the production of larger wafers for
next-generation power devices.
- Vacuum & Pressure Management: Equipped with an advanced vacuum and
pressure system to maintain ideal growth conditions, reducing
defect rates and improving yields.
Technical Specifications
| Specification | Details |
|---|
| Dimensions (L × W × H) | 2500 × 2400 × 3456 mm or customize |
| Crucible Diameter | 900 mm |
| Ultimate Vacuum Pressure | 6 × 10⁻⁴ Pa (after 1.5h of vacuum) |
| Leakage Rate | ≤5 Pa/12h (bake-out) |
| Rotation Shaft Diameter | 50 mm |
| Rotation Speed | 0.5–5 rpm |
| Heating Method | Electric resistance heating |
| Maximum Furnace Temperature | 2500°C |
| Heating Power | 40 kW × 2 × 20 kW |
| Temperature Measurement | Dual-color infrared pyrometer |
| Temperature Range | 900–3000°C |
| Temperature Accuracy | ±1°C |
| Pressure Range | 1–700 mbar |
| Pressure Control Accuracy | 1–10 mbar: ±0.5% F.S;
10–100 mbar: ±0.5% F.S;
100–700 mbar: ±0.5% F.S |
| Operation Type | Bottom loading, manual/automatic safety options |
| Optional Features | Dual temperature measurement, multiple heating zones |
Result: Perfect Crystal Growth
The core strength of our SiC single crystal growth furnace lies in
its ability to consistently produce high-quality, defect-free SiC
crystals. With precision temperature control, advanced vacuum
management, and cutting-edge resistance heating technology, we
ensure flawless crystal growth with minimal defects. This
perfection is crucial for semiconductor applications, where even
slight imperfections can significantly impact the performance of
the final device.
Meeting Semiconductor Standards
The SiC wafers grown in our furnace exceed industry standards for
both performance and reliability. The crystal structures exhibit
exceptional uniformity, low dislocation densities, and high
electrical conductivity, making them ideal for high-power,
high-frequency semiconductor devices. These qualities are essential
for next-generation power devices, including those used in electric
vehicles (EVs), renewable energy systems, and telecommunication
equipment.
| Inspection Category | Quality Parameters | Acceptance Criteria | Inspection Method |
|---|
| 1. Crystal Structure | Dislocation Density | ≤ 1 cm⁻² | Optical Microscopy / X-ray Diffraction |
| Crystalline Perfection | No visible defects or cracks | Visual Inspection / AFM (Atomic Force Microscopy) | |
| 2. Dimensions | Ingot Diameter | 6-inch, 8-inch, or 12-inch ±0.5mm | Caliper Measurement |
| Ingot Length | ±1mm | Ruler / Laser Measurement | |
| 3. Surface Quality | Surface Roughness | Ra ≤ 0.5 μm | Surface Profilometer |
| Surface Defects | No microcracks, pits, or scratches | Visual Inspection / Microscopic Examination | |
| 4. Electrical Properties | Resistivity | ≥ 10³ Ω·cm (typical for high-quality SiC) | Hall Effect Measurement |
| Carrier Mobility | > 100 cm²/V·s (for high-performance SiC) | Time-of-Flight (TOF) Measurement | |
| 5. Thermal Properties | Thermal Conductivity | ≥ 4.9 W/cm·K | Laser Flash Analysis |
| 6. Chemical Composition | Carbon Content | ≤ 1% (for optimal performance) | ICP-OES (Inductively Coupled Plasma Optical Emission Spectroscopy) |
| Oxygen Impurities | ≤ 0.5% | Secondary Ion Mass Spectrometry (SIMS) | |
| 7. Pressure Resistance | Mechanical Strength | Must withstand stress tests without fracture | Compression Test / Bending Test |
| 8. Uniformity | Crystallization Uniformity | ≤ 5% variation across ingot | X-ray Mapping / SEM (Scanning Electron Microscopy) |
| 9. Ingot Homogeneity | Micropore Density | ≤ 1% per unit volume | Microscopy / Optical Scanning |
ZMSH Support Services
- Customizable Solutions: Our SiC single crystal growth furnace can
be customized to meet your specific production requirements,
ensuring high-quality SiC crystals.
- On-Site Installation: Our team manages the on-site installation and
ensures smooth integration with your existing systems for optimal
performance.
- Comprehensive Training: We provide thorough customer training
covering furnace operation, maintenance, and troubleshooting to
ensure your team is equipped for effective crystal growth.
- After-Sales Maintenance: ZMSH offers reliable after-sales support,
including maintenance and repair services, to ensure your furnace
operates at peak performance.
Q&A
Q: What is the crystal growth of silicon carbide?
A: Silicon carbide (SiC) crystal growth involves creating
high-quality SiC crystals through processes like Czochralski or
Physical Vapor Transport (PVT), essential for power semiconductor
devices.
Key Words:
SiC Single Crystal Growth Furnace SiC Crystals Semiconductor Devices Crystal Growth Technology
