Abstract
Silicon carbide (SiC), a third-generation wide-bandgap
semiconductor, dominates high-temperature, high-frequency, and
high-power markets including EVs, 5G, and renewable energy. Silicon
Powder for SiC is a specialized ultra-pure silicon source engineered for SiC
crystal growth and device fabrication. Produced via advanced plasma-assisted CVD technology, it delivers:
- Ultra-high purity: Metal impurities ≤1 ppm, oxygen ≤5 ppm (meeting
ISO 10664-1 standards).
- Tailorable particle size: D50 range of 0.1–5 μm with narrow
distribution (PDI <0.3).
- Superior reactivity: Spherical particles enhance chemical
activity, boosting SiC growth rates by 15–20%.
- Environmental compliance: RoHS 2.0/REACH-certified, non-toxic, and
zero residue risk.
Unlike conventional metallurgical silicon powders, our product
employs nanoscale dispersion and plasma purification to reduce
defect densities, enabling efficient production of 8-inch+ SiC
wafers.
Compony Introduction
Our company, ZMSH, has been a prominent player in the semiconductor
industry for over a decade, boasting a professional team of factory experts and sales
personnel. We specialize in providing customized sapphire wafer
solutions, offering both tailored designs and OEM services to meet diverse
client needs. At ZMSH, we are committed to delivering products that excel in
both price and quality, ensuring customer satisfaction at every
stage. We invite you to contact us for more information or to
discuss your specific requirements.
Silicon powder Tecnical Parameters
| Parameter | Range | Method | Typical Value |
|---|
| Purity (Si) | ≥99.9999% | ICP-MS/OES | 99.99995% |
| Metal impurities (Al/Cr/Ni) | ≤0.5 ppm (total) | SEM-EDS | 0.2 ppm |
| Oxygen (O) | ≤5 ppm | LECO TC-400 | 3.8 ppm |
| Carbon (C) | ≤0.1 ppm | LECO TC-400 | 0.05 ppm |
| Particle Size (D10/D50/D90) | 0.05–2.0 μm可调 | Malvern Mastersizer 3000 | 1.2 μm |
| Specific Surface Area (SSA) | 10–50 m²/g | BET (N₂ adsorption) | 35 m²/g |
| Density (g/cm³) | 2.32 (true density) | Pycnometer | 2.31 |
| pH (1% aqueous solution) | 6.5–7.5 | pH meter | 7.0 |
SiC powder Applications
1. SiC Crystal Growth
- Process: PVT (Vapor Transport)/LPE (Liquid Phase Epitaxy)
- Role: High-purity Si source reacts with carbon precursors (C₂H₂/CH₄) at
>2000°C to form SiC nuclei.
- Benefits: Low oxygen content minimizes grain boundary defects; uniform
particle size improves growth rate by 15–20%.
2. MOCVD Epitaxial Deposition
- Process: Metal-Organic CVD (MOCVD)
- Role: Doping source for n-type/p-type SiC layers.
- Benefits: Ultra-pure material prevents epitaxial layer contamination,
achieving electron trap density <10¹⁴ cm⁻³.
3. CMP Polishing
- Process: Chemical Mechanical Planarization
- Role: Reacts with SiC substrate to form soluble SiO₂ for surface
smoothing.
- Benefits: Spherical particles reduce scratching risk; polishing speed
increases 3x vs. alumina slurries.
4. Renewable Energy & Photovoltaics
- Applications: Holes transporting layers in perovskite solar cells, solid-state
electrolyte additives.
- Benefits: High SSA enhances material dispersion, reducing interfacial
resistance.
Product Display - ZMSH
SiC Powder FAQ
Q: How does silicon purity impact SiC device performance?
A: Impurities (e.g., Al, Na) create deep-level defects, increasing
carrier recombination. Our silicon powder (<0.5 ppm metals)
reduces RDS(on) in 6-inch SiC MOSFETs by 10–15%.
