SiC wafer 12inch 300mm thickness 750±25um Prime Dummy Reaserch
Grade for Semiconductor
12 inch SiC wafer‘s abstract
A 12-inch (300mm) Silicon
Carbide (SiC) wafer, with a thickness of 750±25 microns, is a critical material in the
semiconductor industry due to its exceptional thermal conductivity,
high breakdown voltage, and superior mechanical properties. These
wafers are manufactured with advanced techniques to meet the
stringent requirements of high-performance semiconductor
applications. SiC's inherent properties make it ideal for power
devices and high-temperature electronics, offering higher
efficiency and durability compared to traditional silicon-based
semiconductors.
12 inch SiC wafer‘s data sheet
| 1 2 inch Silicon Carbide (SiC) Substrate Specification |
| Grade |
ZeroMPD Production
Grade(Z Grade) | Standard Production
Grade(P Grade) | Dummy Grade
(D Grade) |
| Diameter | 3 0 0 mm~1305mm |
| Thickness | 4H-N | 750μm±15 μm | 750μm±25 μm |
| 4H-SI | 750μm±15 μm | 750μm±25 μm |
| Wafer Orientation | Off axis : 4.0° toward <1120 >±0.5° for 4H-N, On axis :
<0001>±0.5° for 4H-SI |
| Micropipe Density | 4H-N | ≤0.4cm-2 | ≤4cm-2 | ≤25cm-2 |
| 4H-SI | ≤5cm-2 | ≤10cm-2 | ≤25cm-2 |
| Resistivity | 4H-N | 0.015~0.024 Ω·cm | 0.015~0.028 Ω·cm |
| 4H-SI | ≥1E10 Ω·cm | ≥1E5 Ω·cm |
| Primary Flat Orientation | {10-10} ±5.0° |
| Primary Flat Length | 4H-N | N/A |
| 4H-SI | Notch |
| Edge Exclusion | 3 mm |
| LTV/TTV/Bow /Warp | ≤5μm/≤15μm/≤35 μm/≤55 μm | ≤5μm/≤15μm/≤35 □ μm/≤55 □ μm |
| 1 Roughness | Polish Ra≤1 nm |
| CMP Ra≤0.2 nm | Ra≤0.5 nm |
Edge Cracks By High Intensity Light
1 Hex Plates By High Intensity Light
1 Polytype Areas By High Intensity Light
Visual Carbon Inclusions
Silicon Surface Scratches By High Intensity Light | None
Cumulative area ≤0.05%
None
Cumulative area ≤0.05%
None | Cumulative length ≤ 20 mm, single length≤2 mm
Cumulative area ≤0.1%
Cumulative area≤3%
Cumulative area ≤3%
Cumulative length≤1×wafer diameter |
| Edge Chips By High Intensity Light | None permitted ≥0.2mm width and depth | 7 allowed, ≤1 mm each |
| Threading screw dislocation | ≤500 cm-2 | N/A |
| Base plane dislocation | ≤1000 cm-2 | N/A |
Silicon Surface Contamination By High Intensity Light | None |
| Packaging | Multi-wafer Cassette Or Single Wafer Container |
12 inch SiC wafer‘s photo
12 inch SiC wafer‘s properties
1. Advantages of 12-inch (large size) wafer:
- 12inch SiC wafer Increased production efficiency: As the wafer size increases, the
number of chips per unit area increases significantly, greatly
enhancing manufacturing efficiency. Compared to smaller wafers, a
12-inch wafer can produce more devices in the same amount of time,
shortening the production cycle.
- 12inch SiC wafer Reduced production costs: Since a single 12-inch SiC wafer can
produce more chips, the manufacturing cost per chip is greatly
reduced. Larger wafers improve the efficiency of processes such as
photolithography and thin-film deposition, thus lowering the
overall production cost.
- Higher yield: While SiC material inherently has a higher defect
rate, larger wafers offer more tolerance for defects in the
production process, which helps improve the yield.
2. Suitability for high-power applications:
- 12inch SiC wafer SiC material itself has excellent properties for high temperature,
high frequency, high power, and high voltage performance, making it
ideal for power electronics, automotive electronics, and 5G base
stations, among other high-power applications. A 12-inch SiC wafer
better meets the demands for device performance and reliability in
these fields.
- 12inch SiC wafer Electric vehicles (EV) and charging stations: SiC devices,
especially those made from 12-inch wafers, have become a key
technology in electric vehicle (EV) battery management systems
(BMS), DC fast charging, and power conversion systems. The larger
wafer size can meet the higher power requirements, providing
greater efficiency and lower energy consumption.
3. Alignment with industry development trends:
- 12inch SiC wafer Advanced processes and higher integration: As semiconductor
technology progresses, there is increasing demand for power devices
with higher integration and performance, particularly in fields
such as automotive, renewable energy (solar, wind), and smart
grids. The 12-inch SiC wafer not only offers higher power density
and reliability but also meets the increasingly complex device
design and smaller size requirements.
- Global market demand growth: There is a growing global demand for
green energy, sustainable development, and efficient power
transmission, which continues to drive the market for SiC power
devices. The rapid development of electric vehicles (EVs) and
efficient power equipment has expanded the application of 12-inch
SiC wafers.
4. Material advantages:
- 12inch SiC wafer SiC material has excellent thermal conductivity, high-temperature
resistance, and radiation tolerance. The 12-inch SiC wafer can
maintain high performance at higher operating temperatures, making
it particularly suitable for high-voltage, high-power applications.
- The 12-inch SiC wafer can also operate over a wider temperature
range, which is critical for the stability and durability of power
electronic devices.
Q&A
Q: What are the advantages of using 12-inch SiC wafers in
semiconductor manufacturing?
A:The main advantages of using 12-inch SiC wafers include:
- Increased Production Efficiency: Larger wafers allow more chips to
be produced per unit area, reducing the manufacturing cycle time.
This results in higher throughput and better overall efficiency
compared to smaller wafers.
- Reduced Production Costs: A single 12-inch wafer produces more
chips, which lowers the cost per chip. Larger wafers also enhance
the efficiency of processes such as photolithography and thin-film
deposition.
- Higher Yield: Although SiC material tends to have a higher defect
rate, larger wafers allow more tolerance for defects, which
ultimately helps improve the yield.
Q: What are the key applications for 12-inch SiC wafers in
high-power systems?
A:12-inch SiC wafers are particularly suitable for high-power
applications such as:
- Electric Vehicles (EVs) and Charging Stations: SiC devices made
from 12-inch wafers are crucial for power conversion systems,
battery management systems (BMS), and DC fast charging in electric
vehicles. The larger wafer size supports higher power demands,
improving efficiency and reducing energy consumption.
- High-Voltage and High-Power Electronics: SiC’s excellent thermal
conductivity and resistance to high temperatures make 12-inch SiC
wafers ideal for high-power electronics used in automotive,
renewable energy (solar, wind), and smart grid applications.
These wafers meet the growing need for efficient power devices in
the evolving global market for green energy and sustainable
technology.
Tag: 12-inch SiC Wafer SiC Wafer 300mm SiC wafer
