SiC furnance SiC Ingot Growth Furnance,4inch 6inch 8inch,PVT Lely
TSSG LPE method High Growth Rate
SiC Ingot Growth Furnance‘s abstract
The SiC Ingot Growth Furnace is designed for efficient silicon
carbide crystal growth using graphite resistance heating. It
operates with a maximum heating temperature of 2300°C and a rated
power of 80kW. The furnace supports energy consumption between
3500kW·h and 4500kW·h per cycle, with a crystal growth cycle
ranging from 5D to 7D. The furnace's size is 2150mm x 1600mm x
2850mm, and it has a cooling water flow rate of 6m³/h. The furnace
operates in a vacuum environment with argon and nitrogen as the
atmospheric gases, ensuring high-quality ingot production.
SiC Ingot Growth Furnance‘s photo
Our SiC Ingot Growth Furnance‘ s Crystal Special Crystal Type
SiC has over 250 crystal structures, but only the 4HC type can be
used for SiC power devices. ZMSH has successfully assisted clients
in growing this specific crystal type multiple times using its own
furnace.
Our SiC Ingot Growth Furnace is designed for high-efficiency
silicon carbide (SiC) crystal growth, capable of processing 4-inch,
6-inch, and 8-inch SiC wafers. Using advanced techniques like PVT
(Physical Vapor Transport), Lely, TSSG (Temperature Gradient
Method), and LPE (Liquid Phase Epitaxy), our furnace supports high
growth rates while ensuring optimal crystal quality.
The furnace is engineered to grow various SiC crystal structures,
including the conductive 4H, semi-insulating 4H, and other crystal
types, such as 6H, 2H, and 3C. These structures are crucial for the
production of SiC power devices and semiconductors, which are
essential for applications in power electronics, energy-efficient
systems, and high-voltage devices.
Our SiC furnace ensures precise temperature control and uniform
crystal growth conditions, enabling the production of high-quality
SiC ingots and wafers for advanced semiconductor applications.
Our SiC
Ingot Growth Furnance‘ s advantage
1-Unique thermal field design
- The axial temperature gradient is controllable, the radial
temperature gradient is adjustable, and the temperature profile is
smooth, resulting in a crystal growth interface that is nearly
flat, thus increasing the crystal utilization thickness.
- Reduced raw material consumption: The internal thermal field is
evenly distributed, ensuring a more uniform temperature
distribution within the raw material, significantly improving
powder utilization and reducing waste.
- There is no strong coupling between the axial and radial
temperatures, allowing for high-precision control of both axial and
radial temperature gradients. This is the key to solving crystal
stress and reducing crystal dislocation density.
2- High control precision
The SiC Ingot Growth Furnace is specifically designed to produce
high-quality silicon carbide (SiC) crystals, which are crucial for
semiconductor applications, including power electronics,
optoelectronics, and energy-efficient devices. SiC is a vital
material in the production of components that require high thermal
conductivity, electrical efficiency, and durability. Our furnace is
equipped with advanced control systems to ensure consistent,
optimal performance and crystal quality.
The equipment offers exceptional precision, with a power supply
accuracy of 0.0005%, gas flow accuracy of ±0.05 L/h, temperature
control accuracy of ±0.5°C, and chamber pressure control accuracy
of ±10 Pa. These precise parameters create a stable, uniform
crystal growth environment, which is essential for producing
high-purity SiC ingots and wafers with minimal defects.
The system’s key components, such as the Proportional Valve,
Mechanical Pump, Vacuum Chamber, Gas Flow Meter, and Molecular
Pump, work in tandem to ensure reliable performance, improve
material utilization, and reduce the occurrence of defects. These
elements contribute to the furnace’s ability to produce
high-quality SiC crystals that meet the demanding standards of the
semiconductor industry.
ZMSH’s technology integrates the latest advancements in crystal
growth processes, ensuring the highest standards of SiC crystal
production. With the ever-growing demand for high-performance
SiC-based components, our equipment is engineered to support
industries such as power electronics, renewable energy, and
advanced technology development, driving innovations in
energy-efficient solutions and sustainable applications.
3- Automated operation
Automatic Response Signal monitoring, signal feedback
Automatic Alarm Over-limit warning, dynamic safety
Automatic Control Real-time monitoring and storage of production parameters, remote
access, and control.
Active Prompt Expert system, human-machine interaction
ZMSH’s SiC Furnace is equipped with advanced automation for
efficient operation. It features automatic response with signal monitoring and feedback, automatic alarms for over-limit conditions, and automatic control for real-time parameter monitoring with remote access. The system
also includes active prompts for expert support and seamless human-machine interaction.
These features reduce human dependency, enhance process control,
and ensure high-quality SiC ingot production, supporting
large-scale manufacturing efficiency.
Our SiC Ingot Growth Furnance‘ s data sheet
| 6inch sic furnance | 8inch sic furnance |
| PROJECT | PARAMETER | PROJECT | PARAMETER |
| Heating Method | Graphite Resistance Heating | Heating Method | Graphite Resistance Heating |
| Input Power | Three-phase, five-wire AC 380V ± 10% 50Hz~60Hz | Input Power | Three-phase, five-wire AC 380V ± 10% 50Hz~60Hz |
| Max Heating Temperature | 2300°C | Max Heating Temperature | 2300°C |
| Rated Heating Power | 80kW | Rated Heating Power | 80kW |
| Heater Power Range | 35kW ~ 40kW | Heater Power Range | 35kW ~ 40kW |
| Energy Consumption per Cycle | 3500kW·h ~ 4500kW·h | Energy Consumption per Cycle | 3500kW·h ~ 4500kW·h |
| Crystal Growth Cycle | 5D ~ 7D | Crystal Growth Cycle | 5D ~ 7D |
| Main Machine Size | 2150mm x 1600mm x 2850mm (Length x Width x Height) | Main Machine Size | 2150mm x 1600mm x 2850mm (Length x Width x Height) |
| Main Machine Weight | ≈ 2000kg | Main Machine Weight | ≈ 2000kg |
| Cooling Water Flow | 6m³/h | Cooling Water Flow | 6m³/h |
| Cold Furnace Limit Vacuum | 5 × 10⁻⁴ Pa | Cold Furnace Limit Vacuum | 5 × 10⁻⁴ Pa |
| Furnace Atmosphere | Argon (5N), Nitrogen (5N) | Furnace Atmosphere | Argon (5N), Nitrogen (5N) |
| Raw Material | Silicon Carbide Particles | Raw Material | Silicon Carbide Particles |
| Product Crystal Type | 4H | Product Crystal Type | 4H |
| Product Crystal Thickness | 18mm ~ 30mm | Product Crystal Thickness | ≥ 15mm |
| Effective Diameter of Crystal | ≥ 150mm | Effective Diameter of Crystal | ≥ 200mm |
Our servise
Tailored One-Stop Solutions
We provide customized Silicon Carbide (SiC) furnace solutions,
including PVT, Lely, and TSSG/LPE technologies, tailored to meet
your specific needs. From design to optimization, we ensure our
systems align with your production goals.
Client Training
We offer comprehensive training to ensure your team fully
understands how to operate and maintain our furnaces. Our training
covers everything from basic operations to advanced
troubleshooting.
On-Site Installation and Commissioning
Our team personally installs and commissions the SiC furnaces at
your location. We ensure smooth setup and conduct a thorough
verification process to guarantee the system is fully operational.
After-Sales Support
We provide responsive after-sales service. Our team is ready to
assist with on-site repairs and troubleshooting to minimize
downtime and keep your equipment running smoothly.
We are dedicated to offering high-quality furnaces and continuous
support to ensure your success in SiC crystal growth.
