High Efficiency SiC Ingot Growth Furnace for 4-inch, 6-inch, and
8-inch Crystals Using PVT, Lely, and TSSG Methods
Abstract of SiC Ingot Growth Furnance
The SiC Ingot Growth Furnace utilizes graphite resistance heating
for efficient silicon carbide crystal growth. It can reach a
maximum temperature of 2300°C with a rated power of 80kW. The
furnace consumes between 3500kW·h and 4500kW·h per cycle, with
crystal growth durations ranging from 5 to 7 days. It measures
2150mm x 1600mm x 2850mm and has a cooling water flow rate of
6m³/h. Operating in a vacuum environment with argon and nitrogen
gases, this furnace ensures the production of high-quality SiC
ingots with consistent performance and reliable output.
The photo of SiC Ingot Growth Furnance
Our SiC Ingot Growth Furnance' s Crystal Special Crystal Type
SiC has over 250 crystal structures, but only the 4HC type can be
used for SiC power devices. ZMSH has successfully assisted clients
in growing this specific crystal type multiple times using its own
furnace.
Our SiC Ingot Growth Furnace is designed for high-efficiency
silicon carbide (SiC) crystal growth, capable of processing 4-inch,
6-inch, and 8-inch SiC wafers. Using advanced techniques like PVT
(Physical Vapor Transport), Lely, TSSG (Temperature Gradient
Method), and LPE (Liquid Phase Epitaxy), our furnace supports high
growth rates while ensuring optimal crystal quality.
The furnace is engineered to grow various SiC crystal structures,
including the conductive 4H, semi-insulating 4H, and other crystal
types, such as 6H, 2H, and 3C. These structures are crucial for the
production of SiC power devices and semiconductors, which are
essential for applications in power electronics, energy-efficient
systems, and high-voltage devices.
Our SiC furnace ensures precise temperature control and uniform
crystal growth conditions, enabling the production of high-quality
SiC ingots and wafers for advanced semiconductor applications.
Our SiC Ingot Growth Furnance' s advantage
1.Unique thermal field design
The axial and radial temperature gradients can be precisely
controlled, with the temperature profile being smooth and uniform.
This results in a nearly flat crystal growth interface, maximizing
the utilization of the crystal thickness.
Improved raw material efficiency: The thermal field is evenly
distributed throughout the system, ensuring a more consistent
temperature within the raw material. This significantly enhances
powder utilization, reducing material waste.
The independence between axial and radial temperatures enables
high-precision control of both gradients, which is critical for
addressing crystal stress and minimizing dislocation density.
2.High control precision
The SiC Ingot Growth Furnace is meticulously engineered to produce
high-quality SiC crystals, which are essential for a wide range of
semiconductor applications, such as power electronics,
optoelectronics, and energy-efficient technologies. SiC is a
critical material in the fabrication of components that require
excellent thermal conductivity, electrical performance, and
long-lasting durability. Our furnace features advanced control
systems designed to maintain consistent performance and superior
crystal quality throughout the growth process.
The SiC Ingot Growth Furnace provides exceptional accuracy, with a
power supply precision of 0.0005%, gas flow control accuracy of
±0.05 L/h, temperature regulation accuracy of ±0.5°C, and chamber
pressure stability of ±10 Pa. These finely tuned parameters ensure
a stable, homogeneous environment for crystal growth, which is
crucial for producing high-purity SiC ingots and wafers with
minimal defects.
The SiC Ingot Growth Furnace's key components, including the
Proportional Valve, Mechanical Pump, Vacuum Chamber, Gas Flow
Meter, and Molecular Pump, function together seamlessly to deliver
reliable operation, enhance material utilization, and minimize
defects. These features allow the furnace to produce SiC crystals
that meet the stringent demands of the semiconductor industry.
ZMSH’s technology incorporates cutting-edge crystal growth
techniques, ensuring the highest quality in SiC crystal production.
With the rising demand for high-performance SiC components, our
equipment is optimized to serve industries such as power
electronics, renewable energy, and advanced technology, driving
progress in energy-efficient solutions and sustainable innovations.
3. Automated operation
Automatic Response: Signal monitoring, signal feedback
Automatic Alarm: Over-limit warning, dynamic safety
Automatic Control: Real-time monitoring and storage of production parameters, remote
access, and control.
Active Prompt: Expert system, human-machine interaction
ZMSH's SiC Furnace integrates advanced automation for optimal
operational efficiency. It is equipped with automatic signal
monitoring and feedback mechanisms, over-limit alarms, and
real-time parameter control with remote monitoring capabilities.
The system also provides proactive notifications for expert
assistance and enables smooth interaction between the operator and
the machine.
These features minimize human intervention, improve process
control, and ensure the consistent production of high-quality SiC
ingots, promoting efficiency in large-scale manufacturing
operations.
Our SiC Ingot Growth Furnance's data sheet
| 6inch sic furnance | 8inch sic furnance |
| PROJECT | PARAMETER | PROJECT | PARAMETER |
| Heating Method | Graphite Resistance Heating | Heating Method | Graphite Resistance Heating |
| Input Power | Three-phase, five-wire AC 380V ± 10% 50Hz~60Hz | Input Power | Three-phase, five-wire AC 380V ± 10% 50Hz~60Hz |
| Max Heating Temperature | 2300°C | Max Heating Temperature | 2300°C |
| Rated Heating Power | 80kW | Rated Heating Power | 80kW |
| Heater Power Range | 35kW ~ 40kW | Heater Power Range | 35kW ~ 40kW |
| Energy Consumption per Cycle | 3500kW·h ~ 4500kW·h | Energy Consumption per Cycle | 3500kW·h ~ 4500kW·h |
| Crystal Growth Cycle | 5D ~ 7D | Crystal Growth Cycle | 5D ~ 7D |
| Main Machine Size | 2150mm x 1600mm x 2850mm (Length x Width x Height) | Main Machine Size | 2150mm x 1600mm x 2850mm (Length x Width x Height) |
| Main Machine Weight | ≈ 2000kg | Main Machine Weight | ≈ 2000kg |
| Cooling Water Flow | 6m³/h | Cooling Water Flow | 6m³/h |
| Cold Furnace Limit Vacuum | 5 × 10⁻⁴ Pa | Cold Furnace Limit Vacuum | 5 × 10⁻⁴ Pa |
| Furnace Atmosphere | Argon (5N), Nitrogen (5N) | Furnace Atmosphere | Argon (5N), Nitrogen (5N) |
| Raw Material | Silicon Carbide Particles | Raw Material | Silicon Carbide Particles |
| Product Crystal Type | 4H | Product Crystal Type | 4H |
| Product Crystal Thickness | 18mm ~ 30mm | Product Crystal Thickness | ≥ 15mm |
| Effective Diameter of Crystal | ≥ 150mm | Effective Diameter of Crystal | ≥ 200mm |
Our servise
Tailored One-Stop Solutions
We provide customized Silicon Carbide (SiC) furnace solutions,
including PVT, Lely, and TSSG/LPE technologies, tailored to meet
your specific needs. From design to optimization, we ensure our
systems align with your production goals.
Client Training
We offer comprehensive training to ensure your team fully
understands how to operate and maintain our furnaces. Our training
covers everything from basic operations to advanced
troubleshooting.
On-Site Installation and Commissioning
Our team personally installs and commissions the SiC furnaces at
your location. We ensure smooth setup and conduct a thorough
verification process to guarantee the system is fully operational.
After-Sales Support
We provide responsive after-sales service. Our team is ready to
assist with on-site repairs and troubleshooting to minimize
downtime and keep your equipment running smoothly.
We are dedicated to offering high-quality furnaces and continuous
support to ensure your success in SiC crystal growth.
