4H-N 4inch diameter Silicon Carbide (SiC) Substrate Specification

SiC Applications

Application areas

• 1 high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN,
• diodes, IGBT, MOSFET
• 2 optoelectronic devices: mainly used in GaN/SiC blue LED substrate material (GaN/SiC) LED

1. High-Power Electronic Devices

Due to its superior thermal conductivity, high breakdown voltage, and wide bandgap, 6N purity undoped HPSI SiC wafers are ideal for high-power electronic devices. These wafers can be used in power electronics such as diodes, MOSFETs, and IGBTs for applications like electric vehicles, renewable energy systems, and power grid management, enabling efficient power conversion and reducing energy losses.

2. Radio Frequency (RF) and Microwave Devices

HPSI SiC wafers are essential for RF and microwave devices, particularly for use in telecommunications, radar, and satellite communication systems. Their semi-insulating nature helps in reducing parasitic capacitances and improving high-frequency performance, making them suitable for RF amplifiers, switches, and oscillators in wireless communication and defense technologies.

3. Optoelectronic Devices

SiC wafers are increasingly used in optoelectronic applications, including UV detectors, LEDs, and lasers. The 6N purity undoped wafers provide superior material characteristics that enhance the performance of these devices, particularly in harsh environments where conventional silicon-based devices would fail. Applications include medical diagnostics, military equipment, and industrial sensing.

4. Wide Bandgap Semiconductors for Harsh Environments

SiC wafers are known for their ability to function in extreme temperatures and high-radiation environments. These characteristics make 6N purity SiC wafers perfect for aerospace, automotive, and defense industries, where devices need to operate under harsh conditions, such as in spacecraft, high-temperature engines, or nuclear reactors.

5. Research and Development

As a dummy prime-grade wafer, this type of SiC wafer is used in R&D environments for testing and calibration purposes. Its high purity and polished surface make it ideal for validating processes in semiconductor fabrication, testing new materials, and developing new semiconductor devices without the need for active doping. It's frequently used in academic and industrial research labs for studies in materials science, device physics, and semiconductor engineering.

6. High-Frequency Switching Devices

SiC wafers are commonly utilized in high-frequency switching devices for applications in power management systems. Their wide bandgap and semi-insulating properties make them highly efficient for handling fast switching speeds with reduced power losses, which are critical in systems like inverters, converters, and uninterruptible power supplies (UPS).

7. Wafer-Level Packaging and MEMS

The DSP surface of the SiC wafer allows for precise integration into wafer-level packaging and micro-electromechanical systems (MEMS). These applications require extremely smooth surfaces for high-resolution patterning and etching, making the polished surface of the 6N purity wafer a crucial feature. MEMS devices are commonly used in sensors, actuators, and other miniaturized systems for automotive, medical, and consumer electronics applications.

8. Quantum Computing and Advanced Electronics

In cutting-edge applications like quantum computing and next-generation semiconductor devices, the undoped HPSI SiC wafer serves as a stable and highly pure platform for building quantum devices. The high purity and semi-insulating properties make it an ideal material for hosting qubits and other quantum components.

In conclusion, the 6N purity DSP surface, undoped HPSI Dummy Prime Grade SiC wafer is an essential material for a wide range of applications, including high-power electronics, RF devices, optoelectronics, quantum computing, and advanced research. Its high purity, semi-insulating properties, and polished surface enable superior performance in challenging environments and contribute to advancements in both industrial and academic research.