2inch InP wafers 3inch 4inch N/P TYPE InP Semiconductor Substrate Wafers Doped S+/ Zn+ /Fe +

growth (modified VFG method) is used to pull a single crystal through a boric oxide liquid encapsulant starting from a seed.

The dopant (Fe, S, Sn or Zn)is added to the crucible along with the polycrystal. High pressure is applied inside the chamber to prevent decomposition of the Indium Phosphide.he company has developed a process to yield fully stoechiometric, high purity and low dislocation density inP single crystal.

The VFG technique improves upon the LEC method thanks to a thermal baffle technology in connection with a numerical

modeling of thermal growth conditions. tCZ is a cost-effective mature technology with high quality reproducibility from boule to boule.

Features:
1. The crystal is grown by liquid-sealed straight-drawing technology (LEC), with mature technology and stable electrical performance.

2, using X-ray directional instrument for precise orientation, the crystal orientation deviation is only ±0.5°

3, the wafer is polished by chemical mechanical polishing (CMP) technology, surface roughness <0.5nm

4, to achieve the "open box ready to use" requirements

5, according to user requirements, special specifications product processing

Applications:
IIt has the advantages of high electronic limit drift speed, good radiation resistance and good heat conduction. Suitable for manufacturing high-frequency, high-speed, high-power microwave devices and integrated circuits.

2inch S-C-N/S doped InP WAFERS

2inch S-C-N/Fe+ doped InP WAFERS