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Dummy Research 2 Inch 6H-Semi Silicon Carbide Wafer

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Dummy Research 2 Inch 6H-Semi Silicon Carbide Wafer

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Brand Name :	ZMKJ
Model Number :	6H-semi
Price :	by case
Payment Terms :	T/T, Western Union, MoneyGram
Supply Ability :	1-50pcs/month
Delivery Time :	1-6weeks

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Dummy Research 2 Inch 6H-Semi Silicon Carbide Wafer

2INCH 6H-semi Silicon Carbide sic Wafer 330um dummy research grade
Customzied size/10x10x0.5mmt/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafersS/ Customzied as-cut sic wafers

About Silicon Carbide (SiC)Crystal

Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.

1. Description

Property	4H-SiC, Single Crystal	6H-SiC, Single Crystal
Lattice Parameters	a=3.076 Å c=10.053 Å	a=3.073 Å c=15.117 Å
Stacking Sequence	ABCB	ABCACB
Mohs Hardness	≈9.2	≈9.2
Density	3.21 g/cm3

High purity 4inch diameter Silicon Carbide (SiC) Substrate Specification

2inch diameter Silicon Carbide (SiC) Substrate Specification
Grade		Zero MPD Grade	Production Grade	Research Grade	Dummy Grade

Diameter		50.8 mm±0.2mm

Thickness		330 μm±25μm

Wafer Orientation		Off axis : 4.0° toward <1120> ±0.5° for 4H-N/4H-SI On axis : <0001>±0.5° for 6H-N/6H-SI/4H-N/4H-SI

Micropipe Density		≤2 cm-2	≤5 cm-2	≤15 cm-2	≤100 cm-2

Resistivity	4H-N	0.015~0.028 Ω•cm

	6H-N	0.02~0.1 Ω•cm

	4/6H-SI	≥1E5 Ω·cm

Primary Flat		{10-10}±5.0°

Primary Flat Length		18.5 mm±2.0 mm

Secondary Flat Length		10.0mm±2.0 mm

Secondary Flat Orientation		Silicon face up: 90° CW. from Prime flat ±5.0°

Edge exclusion		1 mm

TTV/Bow /Warp		≤10μm /≤10μm /≤15μm

Roughness		Polish Ra≤1 nm

		CMP Ra≤0.5 nm

Cracks by high intensity light		None		1 allowed, ≤2 mm	Cumulative length ≤ 10mm, single length≤2mm


Hex Plates by high intensity light		Cumulative area ≤1%		Cumulative area ≤1%	Cumulative area ≤3%

Polytype Areas by high intensity light		None		Cumulative area ≤2%	Cumulative area ≤5%


Scratches by high intensity light		3 scratches to 1×wafer diameter cumulative length		5 scratches to 1×wafer diameter cumulative length	5 scratches to 1×wafer diameter cumulative length


edge chip		None		3 allowed, ≤0.5 mm each	5 allowed, ≤1 mm each

6H-N

6H-Semi

CATALOGUE COMMON SIZE

4H-N Type / High Purity SiC wafer/ingots 2 inch 4H N-Type SiC wafer/ingots 3 inch 4H N-Type SiC wafer 4 inch 4H N-Type SiC wafer/ingots 6 inch 4H N-Type SiC wafer/ingots	4H Semi-insulating / High Purity SiC wafer 2 inch 4H Semi-insulating SiC wafer 3 inch 4H Semi-insulating SiC wafer 4 inch 4H Semi-insulating SiC wafer 6 inch 4H Semi-insulating SiC wafer
6H N-Type SiC wafer 2 inch 6H N-Type SiC wafer/ingot	Customzied size for 2-6inch

FAQ

1. Are you trading company or manufacturer ?
A: We are trade company but we have own factory which is focus on sapphire and sic wafers.

2 .Where are you? Can I visit you?

A: Sure,welcome to you visit our factory at any time.

3.How about the delivery time?

A: Within3-8 days after we confirm you requirement.

4.what kind of payment does your company support?

A: T/T, 100% L/C at sight, Cash, Western Union are all accepted if you have other payment,please contact us.

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