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Thick 650um 4 Inch Single Crystal InP Semiconductor Substrate

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    Buy cheap Thick 650um 4 Inch Single Crystal InP Semiconductor Substrate from wholesalers
     
    Buy cheap Thick 650um 4 Inch Single Crystal InP Semiconductor Substrate from wholesalers
    • Buy cheap Thick 650um 4 Inch Single Crystal InP Semiconductor Substrate from wholesalers
    • Buy cheap Thick 650um 4 Inch Single Crystal InP Semiconductor Substrate from wholesalers
    • Buy cheap Thick 650um 4 Inch Single Crystal InP Semiconductor Substrate from wholesalers
    • Buy cheap Thick 650um 4 Inch Single Crystal InP Semiconductor Substrate from wholesalers
    • Buy cheap Thick 650um 4 Inch Single Crystal InP Semiconductor Substrate from wholesalers

    Thick 650um 4 Inch Single Crystal InP Semiconductor Substrate

    Ask Lasest Price
    Brand Name : zmkj
    Model Number : InP
    Price : by case
    Payment Terms : T/T, Western Union
    Supply Ability : 500pcs
    Delivery Time : 2-4weeks
    • Product Details
    • Company Profile

    Thick 650um 4 Inch Single Crystal InP Semiconductor Substrate

    2inch InP wafers 3inch 4inch N/P TYPE InP Semiconductor Substrate Wafers Doped S+/ Zn+ /Fe +


    growth (modified VFG method) is used to pull a single crystal through a boric oxide liquid encapsulant starting from a seed.

    The dopant (Fe, S, Sn or Zn)is added to the crucible along with the polycrystal. High pressure is applied inside the chamber to prevent decomposition of the Indium Phosphide.he company has developed a process to yield fully stoechiometric, high purity and low dislocation density inP single crystal.

    The VFG technique improves upon the LEC method thanks to a thermal baffle technology in connection with a numerical

    modeling of thermal growth conditions. tCZ is a cost-effective mature technology with high quality reproducibility from boule to boule.


    Applications:
    IIt has the advantages of high electronic limit drift speed, good radiation resistance and good heat conduction. Suitable for manufacturing high-frequency, high-speed, high-power microwave devices and integrated circuits.


    Features:
    1. The crystal is grown by liquid-sealed straight-drawing technology (LEC), with mature technology and stable electrical performance.
    2, using X-ray directional instrument for precise orientation, the crystal orientation deviation is only ±0.5°
    3, the wafer is polished by chemical mechanical polishing (CMP) technology, surface roughness <0.5nm
    4, to achieve the "open box ready to use" requirements
    5, according to user requirements, special specifications product processing


    size (mm)Dia50.8x0.5mm,10×10×0.5mm,10×5×0.5mm can be customized
    raSurface roughness(Ra):<=5A
    polishsingle or doubles side polished
    package100 grade cleaning plastic bag in 1000 cleaning room

    ---FAQ –

    Q: Are you trading company or manufacturer ?

    A: zmkj is a trading company but have a sapphire manufacturer
    as a supplier of semiconductor materials wafers for a wide span of applications.

    Q: How long is your delivery time?

    A: Generally it is 5-10 days if the goods are in stock. or it is 15-20 days if the goods are not

    in stock,it is according to quantity.

    Q: Do you provide samples ? is it free or extra ?

    A: Yes, we could offer the sample for free charge but do not pay the cost of freight.

    Q: What is your terms of payment ?

    A: Payment<=1000USD, 100% in advance. Payment>=1000USD,
    50% T/T in advance ,balance before shippment.
    If you have another question, pls feel free to contact us as below:

    Quality Thick 650um 4 Inch Single Crystal InP Semiconductor Substrate for sale
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