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High Purity Silicon Carbide Wafer Prime/Dummy/Ultra Grade 4H-Semi SiC Wafers For 5G Device

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Ultra Grade 4H-Semi SiC Wafers For 5G Device

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Brand Name :	ZMKJ
Model Number :	4inch high purity
Price :	1000-2000usd/pcs by FOB
Payment Terms :	T/T, Western Union, MoneyGram
Supply Ability :	1-50pcs/month
Delivery Time :	1-6weeks

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High Purity Silicon Carbide Wafer Prime/Dummy/Ultra Grade 4H-Semi SiC Wafers For 5G Device

High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafers, sic crystal ingots sic semiconductor substrates,Silicon Carbide crystal Wafer/ Customzied as-cut sic wafers

About Silicon Carbide (SiC)Crystal

Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.

PROPERTIES of 4H-SiC Single Crystal

Lattice Parameters: a=3.073Å c=10.053Å
Stacking Sequence: ABCB
Mohs Hardness: ≈9.2
Density: 3.21 g/cm3
Therm. Expansion Coefficient: 4-5×10-6/K
Refraction Index: no= 2.61 ne= 2.66
Dielectric Constant: 9.6
Thermal Conductivity: a~4.2 W/cm·K@298K
(N-type, 0.02 ohm.cm) c~3.7 W/cm·K@298K
Thermal Conductivity: a~4.9 W/cm·K@298K
(Semi-insulating) c~3.9 W/cm·K@298K
Band-gap: 3.23 eV Band-gap: 3.02 eV
Break-Down Electrical Field: 3-5×10 6V/m
Saturation Drift Velocity: 2.0×105m/

High purity 4inch diameter Silicon Carbide (SiC) Substrate Specification

4 inch Diameter High Purity 4H Silicon Carbide Substrate Specifications

SUBSTRATE PROPERTY	Production Grade	Research Grade	Dummy Grade
Diameter	100.0 mm+0.0/-0.5 mm
Surface Orientation	{0001} ±0.2°
Primary Flat Orientation	<11-20> ± 5.0 ̊
Secondary Flat Orientation	90.0 ̊ CW from Primary ± 5.0 ̊, silicon face up
Primary Flat Length	32.5 mm ±2.0 mm
Secondary Flat Length	18.0 mm ±2.0 mm
Wafer Edge	Chamfer
Micropipe Density	≤5 micropipes/ cm2	≤10 micropipes/ cm2	≤50 micropipes/ cm2
Polytype areas by high-intensity light	None permitted		≤10% area
Resistivity	≥1E5 Ω·cm		(area 75%)≥1E5 Ω·cm
Thickness	350.0 μm ± 25.0 μm or 500.0 μm ± 25.0 μm
TTV	≦10μm		≦15 μm
Bow(absolute value)	≦25 μm		≦30 μm
Warp	≦45 μm
Surface Finish	Double Side Polish, Si Face CMP(chemical polishing)
Surface Roughness	CMP Si Face Ra≤0.5 nm		N/A
Cracks by high-intensity light	None permitted
Edge chips/indents by diffuse lighting	None permitted	Qty.2 <1.0 mm width and depth	Qty.2 <1.0 mm width and depth
Total usable area	≥90%	≥80%	N/A

*The other specifications can be customized according to customer’s requirements

6 inch High-purity Semi-insulating 4H-SiC Substrates Specifications

Property	U(Ultra) Grade	P(Production)Grade	R(Research)Grade	D(Dummy)Grade
Diameter	150.0 mm±0.25 mm
Surface Orientation	{0001} ± 0.2°
Primary Flat Orientation	<11-20> ± 5.0 ̊
Secondary flat Orientation	N/A
Primary Flat Length	47.5 mm ±1.5 mm
Secondary flat Length	None
Wafer Edge	Chamfer
Micropipe Density	≤1 /cm2	≤5 /cm2	≤10 /cm2	≤50 /cm2
Polytype area by High-intensity Light	None			≤ 10%
Resistivity	≥1E7 Ω·cm			(area 75%)≥1E7 Ω·cm
Thickness	350.0 μm ± 25.0 μm or 500.0 μm ± 25.0 μm
TTV	≦10 μm
Bow(Absolute Value)	≦40 μm
Warp	≦60 μm
Surface Finish	C-face: Optical polished, Si-face: CMP
Roughness(10μm×10μm)	CMP Si-face Ra<0.5 nm			N/A
Crack by High-intensity Light	None
Edge Chips/Indents by Diffuse Lighting	None		Qty≤2, the length and width of each<1mm
Effective Area	≥90%		≥80%	N/A

* Defects limits apply to entire wafer surface except for the edge exclusion area. # The scratches should be checked on Si face only.

About SiC Substrates Applications

CATALOGUE COMMON SIZE

4H-N Type / High Purity SiC wafer/ingots 2 inch 4H N-Type SiC wafer/ingots 3 inch 4H N-Type SiC wafer 4 inch 4H N-Type SiC wafer/ingots 6 inch 4H N-Type SiC wafer/ingots	4H Semi-insulating / High Purity SiC wafer 2 inch 4H Semi-insulating SiC wafer 3 inch 4H Semi-insulating SiC wafer 4 inch 4H Semi-insulating SiC wafer 6 inch 4H Semi-insulating SiC wafer
6H N-Type SiC wafer 2 inch 6H N-Type SiC wafer/ingot	Customzied size for 2-6inch

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Materials Purchasing

The materials purchasing department is responsible to gather all the raw materials needed to produce your product. Complete traceability of all products and materials, including chemical and physical analysis are always available.

Quality

During and after the manufacture or machining of your products ,quality control department is involved in making sure that all materials and tolerances meet or exceed your specification.

Service

We pride ourselves in having sales engineering staff with over 5 years experiences in the semiconductor industry. They are trained to answer technical questions as well as provide timely quotations for your needs.

we are at your side by any time when you have problem,and resolve it in 10hours.

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High Purity Silicon Carbide Wafer Prime/Dummy/Ultra Grade 4H-Semi SiC Wafers For 5G Device

High Purity Silicon Carbide Wafer Prime/Dummy/Ultra Grade 4H-Semi SiC Wafers For 5G Device

High Purity Silicon Carbide Wafer Prime/Dummy/Ultra Grade 4H-Semi SiC Wafers For 5G Device

About Silicon Carbide (SiC)Crystal

PROPERTIES of 4H-SiC Single Crystal

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High Purity Silicon Carbide Wafer Prime/Dummy/Ultra Grade 4H-Semi SiC Wafers For 5G Device