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4H-N Semi Transparent Sapphire Substrate , SiC Crystal Ingot Optical Widows Lens

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    Buy cheap 4H-N Semi Transparent Sapphire Substrate , SiC Crystal Ingot Optical Widows Lens from wholesalers
     
    Buy cheap 4H-N Semi Transparent Sapphire Substrate , SiC Crystal Ingot Optical Widows Lens from wholesalers
    • Buy cheap 4H-N Semi Transparent Sapphire Substrate , SiC Crystal Ingot Optical Widows Lens from wholesalers
    • Buy cheap 4H-N Semi Transparent Sapphire Substrate , SiC Crystal Ingot Optical Widows Lens from wholesalers
    • Buy cheap 4H-N Semi Transparent Sapphire Substrate , SiC Crystal Ingot Optical Widows Lens from wholesalers
    • Buy cheap 4H-N Semi Transparent Sapphire Substrate , SiC Crystal Ingot Optical Widows Lens from wholesalers

    4H-N Semi Transparent Sapphire Substrate , SiC Crystal Ingot Optical Widows Lens

    Ask Lasest Price
    Brand Name : ZMKJ
    Model Number : sic optical lens
    Price : by case
    Payment Terms : T/T, Western Union, MoneyGram
    Supply Ability : 1-50pcs/month
    Delivery Time : 2-4weeks
    • Product Details
    • Company Profile

    4H-N Semi Transparent Sapphire Substrate , SiC Crystal Ingot Optical Widows Lens


    3inch/4inch/2inch 4H-N/semi transparent SiC crystal ingot for optical widows lens after polished

    About Silicon Carbide (SiC)Crystal

    Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.


    Applications

    III-V Nitride Deposition Optoelectronic Devices

    High-Power Devices High-Temperature Devices High-Frequency Power Devices

    1. Description

    SILICON CARBIDE MATERIAL PROPERTIES

    Property

    4H-SiC, Single Crystal

    6H-SiC, Single Crystal

    Lattice Parameters

    a=3.076 Å c=10.053 Å

    a=3.073 Å c=15.117 Å

    Stacking Sequence

    ABCB

    ABCACB

    Mohs Hardness

    9.2

    9.2

    Density

    3.21 g/cm3

    3.21 g/cm3

    Therm. Expansion Coefficient

    4-5×10-6/K

    4-5×10-6/K

    Refraction Index @750nm

    no = 2.61 ne = 2.66

    no = 2.60 ne = 2.65

    Dielectric Constant

    c~9.66

    c~9.66

    Thermal Conductivity (N-type, 0.02 ohm.cm)

    a~4.2 W/cm·K@298K c~3.7 W/cm·K@298K

    Thermal Conductivity (Semi-insulating)

    a~4.9 W/cm·K@298K c~3.9 W/cm·K@298K

    a~4.6 W/cm·K@298K c~3.2 W/cm·K@298K

    Band-gap

    3.23 eV

    3.02 eV

    Break-Down Electrical Field

    3-5×106V/cm

    3-5×106V/cm

    Saturation Drift Velocity

    2.0×105m/s

    2.0×105m/s

    4 inch n-doped 4H Silicon Carbide SiC Wafer


    2 -6inch diameter Silicon Carbide (SiC) ingot specification1

    Grade

    Production Grade

    Research Grade

    Dummy Grade

    Diameter

    50.8/76.2/100/150mm±0.38mm

    Thickness

    6-15mm

    Wafer Orientation

    On axis : <0001>±0.5° for 6H-N/4H-N/4H-SI/6H-SI Off axis : 4.0° toward  1120  ±0.5° for 4H-N/4H-SI

    Micropipe Density

    ≤5 cm-2

    ≤15 cm-2

    ≤50 cm-2

    Resistivity

    4H-N

    0.015~0.028 Ω·cm

    6H-N

    0.02~0.1 Ω·cm

    4/6H-SI

    >1E5 Ω·cm

    (90%) >1E5 Ω·cm

    Primary Flat

    {10-10}±5.0°

    Primary Flat Length

    15.9 mm±1.7 mm

    Secondary Flat Length

    8.0 mm±1.7 mm

    S

    CATALOGUE COMMON SIZE

    4H-N Type / High Purity SiC wafer/ingots
    2 inch 4H N-Type SiC wafer/ingots
    3 inch 4H N-Type SiC wafer
    4 inch 4H N-Type SiC wafer/ingots
    6 inch 4H N-Type SiC wafer/ingots


    4H Semi-insulating / High Purity SiC wafer

    2 inch 4H Semi-insulating SiC wafer
    3 inch 4H Semi-insulating SiC wafer
    4 inch 4H Semi-insulating SiC wafer
    6 inch 4H Semi-insulating SiC wafer
    6H N-Type SiC wafer
    2 inch 6H N-Type SiC wafer/ingot
    Customzied size for 2-6inch

    About ZMKJ Company

    ZMKJ can provides high quality single crystal SiC wafer ( Silicon Carbide ) to electronic and optoelectronic industry . SiC wafer is a next generation semiconductor material , with unique electrical properties and excellent thermal properties , compared to silicon wafer and GaAs wafer , SiC wafer is more suitable for high temperature and high power device application . SiC wafer can be supplied in diameter 2-6 inch , both 4H and 6H SiC , N-type , Nitrogen doped , and semi-insulating type available . Please contact us for more product information .


    Our Relation Products

    Sapphire wafer& lens/ LiTaO3 Crystal/ SiC wafers/ LaAlO3 / SrTiO3/wafers/ Ruby Ball/ Gap wafers


    FAQ:

    Q: Can I customize the products based on my need?

    A: Yes, we can customize the material, specifications and shape, size based on your needs.


    Q: What's the delivery time?

    A: (1) For the standard products

    For inventory: the delivery is 5 workdays after you place the order.

    For customized products: the delivery is 2 or 3 weeks after you place the order.

    (2) For the special-shaped products, the delivery is 4 workweeks after you place the order.


    Q: What's the way of shipping and cost and pay term ?

    A:(1) We accept 100% T/T In advance by DHL, Fedex, EMS etc.

    (2) If you have your own express account, it's great.If not,we could help you ship them.

    Freight is in accordance with the actual settlement.


    Q: What's your MOQ?

    A: (1) For inventory, the MOQ is 2pcs.

    (2) For customized products, the MOQ is 10pcs up.


    Product Tags:

    silicon carbide substrate

      

    sic wafer

      
    Quality 4H-N Semi Transparent Sapphire Substrate , SiC Crystal Ingot Optical Widows Lens for sale
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