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6 Inch 4H Silicon Carbide SiC Substrates Wafers For Device Epitaxial Growth Customized

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6 Inch 4H Silicon Carbide SiC Substrates Wafers For Device Epitaxial Growth Customized

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Brand Name :	ZMKJ
Model Number :	6inch sic
Price :	600-1500usd/pcs by FOB
Payment Terms :	T/T, Western Union, MoneyGram
Supply Ability :	1-50pcs/month
Delivery Time :	1-6weeks

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6 Inch 4H Silicon Carbide SiC Substrates Wafers For Device Epitaxial Growth Customized

4H-N Testing grade 6inch dia 150mm silicon carbide single crystal (sic) substrates wafers, sic crystal ingots sic semiconductor substrates,Silicon Carbide crystal Wafer

About Silicon Carbide (SiC)Crystal

Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs

1. The specification

6 inch diameter, Silicon Carbide (SiC) Substrate Specification
Grade		Zero MPD Grade	Production Grade	Research Grade	Dummy Grade

Diameter		150.0 mm±0.2mm

ThicknessΔ		350 μm±25μm or 500±25un

Wafer Orientation		Off axis : 4.0° toward< 1120> ±0.5° for 4H-N On axis : <0001>±0.5° for 6H-SI/4H-SI

Primary Flat		{10-10}±5.0°

Primary Flat Length		47.5 mm±2.5 mm

Edge exclusion		3 mm

TTV/Bow /Warp		≤15μm /≤40μm /≤60μm

Micropipe Density		≤1 cm-2	≤5 cm-2	≤15 cm-2	≤100 cm-2

Resistivity	4H-N	0.015~0.028 Ω·cm

	4/6H-SI	≥1E5 Ω·cm

Roughness		Polish Ra≤1 nm

		CMP Ra≤0.5 nm

Cracks by high intensity light		None		1 allowed, ≤2 mm	Cumulative length ≤ 10mm, single length≤2mm

Hex Plates by high intensity light		Cumulative area ≤1%		Cumulative area ≤2%	Cumulative area ≤5%

Polytype Areas by high intensity light		None		Cumulative area≤2%	Cumulative area≤5%

Scratches by high intensity light		3 scratches to 1×wafer diameter cumulative length		5 scratches to 1×wafer diameter cumulative length	5 scratches to 1×wafer diameter cumulative length


Edge chip		None		3 allowed, ≤0.5 mm each	5 allowed, ≤1 mm each

Contamination by high intensity light		None

About our ZMKJ Company

SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.

We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, optics, optoelectronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects.

It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputatiaons.

CATALOGUE COMMON SIZE

4H-N Type / High Purity SiC wafer 2 inch 4H N-Type SiC wafer 3 inch 4H N-Type SiC wafer 4 inch 4H N-Type SiC wafer 6 inch 4H N-Type SiC wafer	4H Semi-insulating / High Purity SiC wafer 2 inch 4H Semi-insulating SiC wafer 3 inch 4H Semi-insulating SiC wafer 4 inch 4H Semi-insulating SiC wafer 6 inch 4H Semi-insulating SiC wafer
6H N-Type SiC wafer 2 inch 6H N-Type SiC wafer

Sales & Customer Service

Materials Purchasing

The materials purchasing department is responsible to gather all the raw materials needed to produce your product. Complete traceability of all products and materials, including chemical and physical analysis are always available.

Quality

During and after the manufacture or machining of your products ,quality control department is involved in making sure that all materials and tolerances meet or exceed your specification.

Service

We pride ourselves in having sales engineering staff with over 5 years experiences in the semiconductor industry. They are trained to answer technical questions as well as provide timely quotations for your needs.

we are at your side by any time when you have problem,and resolve it in 10hours.

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6 Inch 4H Silicon Carbide SiC Substrates Wafers For Device Epitaxial Growth Customized

6 Inch 4H Silicon Carbide SiC Substrates Wafers For Device Epitaxial Growth Customized

6 Inch 4H Silicon Carbide SiC Substrates Wafers For Device Epitaxial Growth Customized

About Silicon Carbide (SiC)Crystal

Sales & Customer Service

Materials Purchasing

Quality

silicon carbide substrate

sic wafer

6 Inch 4H Silicon Carbide SiC Substrates Wafers For Device Epitaxial Growth Customized