2-6 inch Gallium phosphide (GaP) crystals crystal substrate,GaP
wafer
ZMKJ can provides 2inch GaP wafer – gallium
Phosphide which are grown by LEC(Liquid Encapsulated Czochralski) as
epi-ready or mechanical grade with n type, p type or
semi-insulating in different orientation(111)or(100).
Gallium phosphide (GaP), a phosphide of gallium, is a compound
semiconductor material with an indirect band gap of 2.26eV(300K).
The polycrystalline material has the appearance of pale orange
pieces. Undoped single crystal wafers appear clear orange, but
strongly doped wafers appear darker due to free-carrier absorption.
It is odorless and insoluble in water.Sulfur or tellurium are used
as dopants to produce n-type semiconductors. Zinc is used as a
dopant for the p-type semiconductor.Gallium phosphide has
applications in optical systems. Its refractive index is between
4.30 at 262 nm (UV), 3.45 at 550 nm (green) and 3.19 at 840 nm
(IR).
high quality single crystal GaP wafer ( Gallium phosphide ) to
electronic and optoelectronic industry in diameter up to 2 inch .
Gallium phosphide ( GaP ) crystal is an orange-yellow
semi-translucent material formed by two elements , GaP wafer is an
important semiconductor material which have unique electrical
properties as other III-V compound materials and is widely used as
red , yellow , and green LED ( light-emitting diodes ) . We have
as-cut single crystal GaP wafer for your LPE application , and also
provide epi ready grade GaP wafer for your MOCVD & MBE epitaxial
application . Please contact us for more product information .
Electrical and Doping Specification
| Product Name: | Gallium phosphide (GaP) crystal substrate |
Technical parameters:
| | Crystal structure | Cubic a = 5.4505 Å | | Growth method | Czochralski method | | Density | 4.13 g / cm 3 | | Mp | 1480 o C 1 | | Thermal expansion coefficient | 5.3 x10 -6 / O C | | Dopant | S-doped undoped | | Direction | <111> or <100> <100> or <111> | | Type | N N | | Thermal Conductivity | 2 ~ 8 x10 17 / cm 3 4 ~ 6 x10 16 / cm 3 | | Resistivity W.cm | 0.03 to 0.3 | | EPD (cm -2) | <3x10 5 <3x10 5 |
|
| Specifications: |
Crystallographic directions: <111>, <100> ± 0.5 o Standard polished Size: Ø2 "* 0.35mm; Ø2" * 0.43mm. Ø3"x0.3mm | | Note: according to customer requirements with special dimensions
and orientation substrates |
|
| StandardPacking | 1000 clean room, 100 clean bag or single box packaging |
| Dopant available | S / Zn / Cr / Undoped |
|---|
| Type of conductivity | N / P ,Semi-conducting / Semi-insulating |
|---|
| Concentration | 1E17 - 2E18 cm-3 |
|---|
| Mobility | > 100 cm2 / v.s. |
|---|
Product Specification
| Growth | LEC |
|---|
| Diameter | Ø 2" |
|---|
| Thickness | 300um |
|---|
| Orientation | <100> / <111> / <110> or others |
|---|
| Off orientation | Off 2° to 10° |
|---|
| Surface | One side polished or two sides polished or lapped |
|---|
| Flat options | EJ or SEMI. Std . |
|---|
| TTV | <= 10 um |
|---|
| EPD | <= 2E5 cm-2 |
|---|
| Grade | Epi polished grade / mechanical grade |
|---|
| Package | Single wafer container |
|---|
Sample pictures
OUR RELATED Products
InP Wafer ZnO wafers
sic wafers customzied/ standard sapphire wafers
FAQ:
Q: What's the delivery time?
A: (1) For the standard products
For inventory: the delivery is 5 workdays after you place the
order.
For customized products: the delivery is 2 or 3 weeks after you
place the order.
(2) For the special-shaped products, the delivery is 4 workweeks
after you place the order.
Q: What's your MOQ?
A: (1) For inventory, the MOQ is 3pcs.
(2) For customized products, the MOQ is 10-20pcs up.
