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2INCH 3INCH 4Inch Undoped Gallium Arsenide Wafer Semi Insulating GaAs Substrate For LED

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2INCH 3INCH 4Inch Undoped Gallium Arsenide Wafer Semi Insulating GaAs Substrate For LED

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Brand Name :	zmkj
Model Number :	4inch SEMI
Price :	by case
Payment Terms :	T/T, Western Union, MoneyGram
Supply Ability :	500pcs per month
Delivery Time :	2-4weeks

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2INCH 3INCH 4Inch Undoped Gallium Arsenide Wafer Semi Insulating GaAs Substrate For LED

2inch/3inch /4inch /6inch S-C-N Type/ semi-insulation /Si-doped Gallium arsenide GaAs Wafer

Product Description

Our 2’’ to 6’’ semi-conducting & semi-insulating GaAs crystal & wafer are wildly used in semiconductor integrated circuit application & LED general lighting application.

GaAs Wafer Feature and Application

Feature	Application field
High electron mobility	Light emitting diodes
High frequency	Laser diodes
High conversion efficiency	Photovoltaic devices
Low power consumption	High Electron Mobility Transistor
Direct band gap	Heterojunction Bipolar Transistor

PRODUCT DESCRIPTION

Specifications of semi-conducting GaAs wafer

Growth Method	VGF
Dopant	p-type: Zn		n-type: Si
Wafer Shape	Round (dia: 2", 3", 4", 6")
Surface Orientation *	(100)±0.5°
* Other Orientations maybe available upon request
Dopant	Si (n-type)		Zn (p-type)
Carrier Concentration (cm-3)	( 0.8-4) × 1018		( 0.5-5) × 1019
Mobility (cm2/V.S.)	( 1-2.5) × 103		50-120
Etch Pitch Density (cm2)	100-5000		3,000-5,000
Wafer Diameter (mm)	50.8±0.3	76.2±0.3		100±0.3
Thickness (µm)	350±25	625±25		625±25
TTV [P/P] (µm)	≤ 4	≤ 4		≤ 4
TTV [P/E] (µm)	≤ 10	≤ 10		≤ 10
WARP (µm)	≤ 10	≤ 10		≤ 10
OF (mm)	17±1	22±1		32.5±1
OF / IF (mm)	7±1	12±1		18±1
Polish*	E/E, P/E, P/P	E/E, P/E, P/P		E/E, P/E, P/P

Specifications of semi-insulating GaAs wafer

Growth Method	VGF
Dopant	SI Type: Carbon
Wafer Shape	Round (DIA: 2", 3", 4", 6")
Surface Orientation *	(100)±0.5°
* Other Orientations maybe available upon request
Resistivity (Ω.cm)	≥ 1 × 107		≥ 1 × 108
Mobility (cm2/V.S)	≥ 5,000		≥ 4,000
Etch Pitch Density (cm2)	1,500-5,000		1,500-5,000
Wafer Diameter (mm)	50.8±0.3	76.2±0.3	100±0.3	150±0.3
Thickness (µm)	350±25	625±25	625±25	675±25
TTV [P/P] (µm)	≤ 4	≤ 4	≤ 4	≤ 4
TTV [P/E] (µm)	≤ 10	≤ 10	≤ 10	≤ 10
WARP (µm)	≤ 10	≤ 10	≤ 10	≤ 15
OF (mm)	17±1	22±1	32.5±1	NOTCH
OF / IF (mm)	7±1	12±1	18±1	N/A
Polish*	E/E, P/E, P/P	E/E, P/E, P/P	E/E, P/E, P/P	E/E, P/E, P/P

FAQ –
Q: What you can supply logistics and cost?
(1) We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
(2) If you have your own express number, it's great.
If not, we could assist you to deliver. Freight=USD25.0(the first weight) + USD12.0/kg
Q: How to pay?
T/T, Paypal, West Union, MoneyGram, Secure payment and Trade Assurance on Alibaba and etc..
Q: What's the MOQ?
(1) For inventory, the MOQ is 5pcs.
(2) For customized products, the MOQ is 5pcs-20pcs.
It depends on quantity and technics
Q: Do you have inspection report for material?
We can supply detail report for our products.

Packaging – Logistcs
we concern each details of the package , cleaning, anti-static , shock treatment . According to the quantity and shape of the product ,
we will take a different packaging process!

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2INCH 3INCH 4Inch Undoped Gallium Arsenide Wafer Semi Insulating GaAs Substrate For LED

2INCH 3INCH 4Inch Undoped Gallium Arsenide Wafer Semi Insulating GaAs Substrate For LED

2INCH 3INCH 4Inch Undoped Gallium Arsenide Wafer Semi Insulating GaAs Substrate For LED

2inch/3inch /4inch /6inch S-C-N Type/ semi-insulation /Si-doped Gallium arsenide GaAs Wafer

Product Description

wafer substrate

semiconductor wafer

2INCH 3INCH 4Inch Undoped Gallium Arsenide Wafer Semi Insulating GaAs Substrate For LED