PWAM Develops and manufactures compound semiconductor
substrates-gallium arsenide crystal and wafer.We has used advanced
crystal growth technology,vertical gradient freeze(VGF) and GaAs
wafer processing technology,established a production line from
crystal growth, cutting, grinding to polishing processing and built
a 100-class clean room for wafer cleaning and packaging. Our GaAs
wafer include 2~6 inch ingot/wafers for LED,LD and Microelectronics
applications.We are always dedicated to improve the quality of
currently substates and develop large size substrates.
SPECIFICATION --6 inch SI-Dopant N-Type SSP/DSP LED/LD Gallium
Arsenide wafer |
Growth method | VGF |
Orientation | <100> |
Diameter | 150.0 +/- 0.3 mm |
Thickness | 650um +/- 25um |
Polish | Single sided polished (SSP) |
Surface Roughness | Polished |
TTV/Bow | <10um /<10um |
Dopant | Si |
Conductivity type | N-type |
Resistivity(at RT) | (1.2~9.9)*10-3 ohm cm |
Etch Pit Density(EPD) | LED <5000 /cm2 ; LD <500 /cm2 |
Mobility | LED >1000 cm2/v.s ; LD >1500 cm2/v.s |
Carrier Concentration | LED >(0.4-4)*1018 /cm3 ; LD >(0.4-2.5)*1018 /cm3 |
Specifications of semi-conducting GaAs wafer
Growth Method | VGF |
Dopant | p-type: Zn | n-type: Si |
Wafer Shape | Round (DIA: 2", 3", 4", 6") |
Surface Orientation * | (100)±0.5° |
* Other Orientations maybe available upon request |
Dopant | Si (n-type) | Zn (p-type) |
Carrier Concentration (cm-3) | ( 0.8-4) × 1018 | ( 0.5-5) × 1019 |
Mobility (cm2/V.S.) | ( 1-2.5) × 103 | 50-120 |
Etch Pitch Density (cm2) | 100-5000 | 3,000-5,000 |
Wafer Diameter (mm) | 50.8±0.3 | 76.2±0.3 | 100±0.3 |
Thickness (µm) | 350±25 | 625±25 | 625±25 |
TTV [P/P] (µm) | ≤ 4 | ≤ 4 | ≤ 4 |
TTV [P/E] (µm) | ≤ 10 | ≤ 10 | ≤ 10 |
WARP (µm) | ≤ 10 | ≤ 10 | ≤ 10 |
OF (mm) | 17±1 | 22±1 | 32.5±1 |
OF / IF (mm) | 7±1 | 12±1 | 18±1 |
Polish* | E/E, P/E, P/P | E/E, P/E, P/P | E/E, P/E, P/P |
Specifications of semi-insulating GaAs wafer
Growth Method | VGF |
Dopant | SI Type: Carbon |
Wafer Shape | Round (DIA: 2", 3", 4", 6") |
Surface Orientation * | (100)±0.5° |
* Other Orientations maybe available upon request |
Resistivity (Ω.cm) | ≥ 1 × 107 | ≥ 1 × 108 |
Mobility (cm2/V.S) | ≥ 5,000 | ≥ 4,000 |
Etch Pitch Density (cm2) | 1,500-5,000 | 1,500-5,000 |
Wafer Diameter (mm) | 50.8±0.3 | 76.2±0.3 | 100±0.3 | 150±0.3 |
Thickness (µm) | 350±25 | 625±25 | 625±25 | 675±25 |
TTV [P/P] (µm) | ≤ 4 | ≤ 4 | ≤ 4 | ≤ 4 |
TTV [P/E] (µm) | ≤ 10 | ≤ 10 | ≤ 10 | ≤ 10 |
WARP (µm) | ≤ 10 | ≤ 10 | ≤ 10 | ≤ 15 |
OF (mm) | 17±1 | 22±1 | 32.5±1 | NOTCH |
OF / IF (mm) | 7±1 | 12±1 | 18±1 | N/A |
Polish* | E/E, P/E, P/P | E/E, P/E, P/P | E/E, P/E, P/P | E/E, P/E, P/P |
FAQ –
Q: What you can supply logistics and cost?
(1) We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
(2) If you have your own express number, it's great.
If not, we could assist you to deliver. Freight=USD25.0(the first
weight) + USD12.0/kg
Q: What's the delivery time?
(1) For the standard products such as ball lens, powell lens and
collimator lens:
For inventory: the delivery is 5 workdays after order.
For customized products: the delivery is 2 or 3 workweeks after
order.
(2) For the off-standard products, the delivery is 2 or 6 workweeks
after you place the order.
Q: How to pay?
T/T, Paypal, West Union, MoneyGram, Secure payment and Trade
Assurance on Alibaba and etc..
Q: What's the MOQ?
(1) For inventory, the MOQ is 5pcs.
(2) For customized products, the MOQ is 5pcs-20pcs.
It depends on quantity and technics
Q: Do you have inspection report for material?
We can supply detail report for our products.
Packaging – Logistcs
we concern each details of the package , cleaning, anti-static ,
shock treatment . According to the quantity and shape of the
product ,
we will take a different packaging process!
