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SSP Germanium Semiconductor Substrate Ge Wafers For Infrared Band 100 / 110 2 Inch

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    Buy cheap SSP Germanium Semiconductor Substrate Ge Wafers For Infrared Band 100 / 110 2 Inch from wholesalers
     
    Buy cheap SSP Germanium Semiconductor Substrate Ge Wafers For Infrared Band 100 / 110 2 Inch from wholesalers
    • Buy cheap SSP Germanium Semiconductor Substrate Ge Wafers For Infrared Band 100 / 110 2 Inch from wholesalers
    • Buy cheap SSP Germanium Semiconductor Substrate Ge Wafers For Infrared Band 100 / 110 2 Inch from wholesalers
    • Buy cheap SSP Germanium Semiconductor Substrate Ge Wafers For Infrared Band 100 / 110 2 Inch from wholesalers
    • Buy cheap SSP Germanium Semiconductor Substrate Ge Wafers For Infrared Band 100 / 110 2 Inch from wholesalers
    • Buy cheap SSP Germanium Semiconductor Substrate Ge Wafers For Infrared Band 100 / 110 2 Inch from wholesalers
    • Buy cheap SSP Germanium Semiconductor Substrate Ge Wafers For Infrared Band 100 / 110 2 Inch from wholesalers

    SSP Germanium Semiconductor Substrate Ge Wafers For Infrared Band 100 / 110 2 Inch

    Ask Lasest Price
    Brand Name : ZMSH
    Model Number : 2INCH Ge wafers
    Certification : ROHS
    Price : by specification
    Payment Terms : T/T, Western Union
    Supply Ability : 100pcs/month
    Delivery Time : 2-4weeks;
    MOQ : 10PCS
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    SSP Germanium Semiconductor Substrate Ge Wafers For Infrared Band 100 / 110 2 Inch


    2inch N-type single side polished Ge wafers Germanium substrate Ge window for infrared Co2 lasers

    Diameter:25.4mm Thickness:0.325mm


    Shanghai Famous Trade Co,.Ltd offers 2”, 3”, 4”, and 6” germanium wafers, which is short for Ge wafers grown by VGF / LEC. Lightly doped P and N-type Germanium wafers can be also used for the Hall effect experiments. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, and boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.


    Germanium Wafer Process

    With the advancement of science and technology, the processing technique of germanium wafer manufacturers is more and more mature. In the production of germanium wafers, germanium dioxide from the residue processing is further purified in chlorination and hydrolysis steps.
    1) High-purity germanium is obtained during zone refining.
    2)A germanium crystal is produced via the Czochralski process.
    3)The germanium wafer is manufactured via several cutting, grinding, and etching steps.
    4)The wafers are cleaned and inspected. During this process, the wafers are single-side polished or double-side polished according to custom requirements, epi-ready wafer comes.
    5)The thin germanium wafers are packed in single wafer containers, under a nitrogen atmosphere.

    Application of Germanium:

    Germanium blank or window are used in night vision and thermographic imaging solutions for commercial security, fire fighting and industrial monitoring equipment. Also, they are used as filters for analytical and measuring equipment, windows for remote temperature measurement, and mirrors for lasers.

    Thin Germanium substrates are used in III-V triple-junction solar cells and for power Concentrated PV (CPV) systems and as an optical filter substrate for a long pass SWIR filter application.

    General Properties of Germanium Wafer

    General Properties StructureCubic, a = 5.6754 Å
    Density: 5.765 g/cm3
    Melting Point: 937.4 oC
    Thermal Conductivity: 640
    Crystal Growth TechnologyCzochralski
    Doping availableUndopedSb DopingDoping In or Ga
    Conductive Type/NP
    Resistivity, ohm.cm>35< 0.050.05 – 0.1
    EPD< 5×103/cm2< 5×103/cm2< 5×103/cm2
    < 5×102/cm2< 5×102/cm2< 5×102/cm2

    Product detail:


    mpurity level less than 10³ atoms/cm³

    Material : Ge
    Growth : cz
    Grade : Prime grade
    Type/dopant : Type-N, undoped
    Orientation : [100] ±0,3º
    Diameter : 25.4 mm ±0,2 mm
    Thickness : 325 µm ±15 µm
    Flat : 32 mm ±2 mm @ [110]±1º
    Resistivity : 55-65 Ohm.cm
    EPD : < 5000
    Front side : Polished (epi-ready, Ra <0,5 nm)
    Back side : Ground/etched
    TTV : <10; BOW :<10; WARP :<15um;
    Particles : 0.3
    Laser marking : none
    Packaging : single wafer



    Q1. Are you a factory?

    A1:Yes, we are a professional manufacturer of optical components, we have more than 20 years experience in optical cold working.
    Q2. What is the MOQ of your products?
    A2:No MOQ for customer if our product is in stock, or 1-10pcs.
    Q3:Can I custom the products based on my requirement?
    A3:Yes, we can custom the material, specifications and optical coating for your optical components as your requirement.
    Q4. How many days will samples be finished? How about mass products?
    A4: Generally, we need 1~2 days to finish the sample production. As for the mass products, it depends on your order quantity.
    Q5. What's the delivery time?
    A5: (1) For inventory: the delivery time is 1-3 working days. (2) For customized products: the delivery time is 7 to 25 working days. According to the quantity.
    Quality SSP Germanium Semiconductor Substrate Ge Wafers For Infrared Band 100 / 110 2 Inch for sale
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