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SIC Silicon Carbide Wafer 4H - N Type For MOS Device 2inch Dia50.6mm

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    Buy cheap SIC Silicon Carbide Wafer 4H - N Type For MOS Device 2inch Dia50.6mm from wholesalers
     
    Buy cheap SIC Silicon Carbide Wafer 4H - N Type For MOS Device 2inch Dia50.6mm from wholesalers
    • Buy cheap SIC Silicon Carbide Wafer 4H - N Type For MOS Device 2inch Dia50.6mm from wholesalers
    • Buy cheap SIC Silicon Carbide Wafer 4H - N Type For MOS Device 2inch Dia50.6mm from wholesalers
    • Buy cheap SIC Silicon Carbide Wafer 4H - N Type For MOS Device 2inch Dia50.6mm from wholesalers
    • Buy cheap SIC Silicon Carbide Wafer 4H - N Type For MOS Device 2inch Dia50.6mm from wholesalers
    • Buy cheap SIC Silicon Carbide Wafer 4H - N Type For MOS Device 2inch Dia50.6mm from wholesalers

    SIC Silicon Carbide Wafer 4H - N Type For MOS Device 2inch Dia50.6mm

    Ask Lasest Price
    Brand Name : ZMKJ
    Model Number : 2inch SiC wafers
    Price : by case
    Payment Terms : T/T, Western Union, MoneyGram
    Supply Ability : 5000pcs/month
    Delivery Time : 2-4weeks
    • Product Details
    • Company Profile

    SIC Silicon Carbide Wafer 4H - N Type For MOS Device 2inch Dia50.6mm


    2inch 4/6inch dia50.6mm sic seed wafer 1mm thickness for ingot growth

    Customzied size/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafersS/ Customzied as-cut sic wafers production 4inch grade 4H-N 1.5mm SIC Wafers for seed crystal

    6inch SIC Wafer 4H-N Type production grade sic epitaxial wafers GaN layer on sic


    Regarding Silicon Carbide(SiC) Crystal

    Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.

    SiC Application

    • 1 high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN,
    • diodes, IGBT, MOSFET
    • 2 optoelectronic devices: mainly used in GaN/SiC blue LED substrate material (GaN/SiC) LED
    2inch diameter silicon Carbide(SiC) Substrate Speicfication
    Grade
    Zero MPD Grade
    Production Grade
    Research Grade
    Dummy Grade
    Diameter
    50.6mm±0.2mm
    Thickness
    1000±25um Or other customized thickness
    Wafer Orientation
    Off axis : 4.0° toward <1120> ±0.5° for 4H-N/4H-SI On axis : <0001>±0.5° for 6H-N/6H-SI/4H-N/4H-SI
    Micropipe Density
    ≤0 cm-2
    ≤2 cm-2
    ≤5 cm-2
    ≤30 cm-2
    Resistivity 4H-N
    0.015~0.028 Ω•cm
    Resistivity 4/6H-SI
    ≥1E7 Ω·cm
    Primary Flat
    {10-10}±5.0° or round shape
    Primary Flat Length
    18.5 mm±2.0 mm or round shape
    Secondary Flat Length
    10.0mm±2.0 mm
    Secondary Flat Orientation
    Silicon face up: 90° CW. from Prime flat ±5.0°
    Edge exclusion
    1 mm
    TTV/Bow /Warp
    ≤10μm /≤10μm /≤15μm
    Roughness
    Polish Ra≤1 nm / CMP Ra≤0.5 nm
    Cracks by high intensity light
    None
    1 allowed, ≤2 mm
    Cumulative length ≤ 10mm, single length≤2mm
    Hex Plates by high intensity light
    Cumulative area ≤1%
    Cumulative area ≤1%
    Cumulative area ≤3%
    Polytype Areas by high intensity light
    None
    Cumulative area ≤2%
    Cumulative area ≤5%
    Scratches by high intensity light
    3 scratches to 1×wafer diameter cumulative length
    5 scratches to 1×wafer diameter cumulative length
    5 scratches to 1×wafer diameter cumulative length
    edge chip
    None
    3 allowed, ≤0.5 mm each
    5 allowed, ≤1 mm each

    Product Display





    SiC ApplicationCatalohue Common Size In our Stock

    4H-N Type / High Purity SiC wafer/ingots

    2 inch 4H N-Type SiC wafer/ingots
    3 inch 4H N-Type SiC wafer
    4 inch 4H N-Type SiC wafer/ingots
    6 inch 4H N-Type SiC wafer/ingots

    4H Semi-insulating / High Purity SiC wafer

    2 inch 4H Semi-insulating SiC wafer
    3 inch 4H Semi-insulating SiC wafer
    4 inch 4H Semi-insulating SiC wafer
    6 inch 4H Semi-insulating SiC wafer
    6H N-Type SiC wafer
    2 inch 6H N-Type SiC wafer/ingot
    Customzied size for 2-6inch


    We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, optoelectronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects.
    It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.


    Q: What's the way of shipping and cost?
    (1) We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
    (2) If you have your own express account, it's great.
    Q: How to pay?
    (1) T/T, PayPal, West Union, MoneyGram and
    Assurance payment on Alibaba and etc..
    (2) Bank Fee: West Union≤USD1000.00),
    T/T -: over 1000usd ,please by t/t
    Q: What's the deliver time?
    (1) For inventory: the delivery time is 5 workdays.
    (2) For customized products: the delivery time is 7 to 25 workdays. According to the quantity.
    Q: Can I customize the products based on my need?
    Yes, we can customize the material, specifications and optical coating for your optical components based on your needs.

    Quality SIC Silicon Carbide Wafer 4H - N Type For MOS Device 2inch Dia50.6mm for sale
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