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6inch dia150mm SIC Wafer 4H-N Type Sic substrate for MOS device

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6inch dia150mm SIC Wafer 4H-N Type Sic substrate for MOS device

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Brand Name :	ZMKJ
Model Number :	6inch 4h-n sic wafers
Price :	by case
Payment Terms :	T/T, Western Union, MoneyGram
Supply Ability :	1-50pcs/month
Delivery Time :	1-6weeks

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6inch dia150mm SIC Wafer 4H-N Type Sic substrate for MOS device

4h-n 4inch 6inch dia100mm sic seed wafer 1mm thickness for ingot growth

Customzied size/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafersS/ Customzied as-cut sic wafersProduction 4inch grade 4H-N 1.5mm SIC Wafers for seed crystal

6inch SIC Wafer 4H-N Type production grade sic epitaxial wafers GaN layer on sic

About Silicon Carbide (SiC)Crystal

Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.

1. Description

Property	4H-SiC, Single Crystal	6H-SiC, Single Crystal
Lattice Parameters	a=3.076 Å c=10.053 Å	a=3.073 Å c=15.117 Å
Stacking Sequence	ABCB	ABCACB
Mohs Hardness	≈9.2	≈9.2
Density	3.21 g/cm3	3.21 g/cm3
Therm. Expansion Coefficient	4-5×10-6/K	4-5×10-6/K
Refraction Index @750nm	no = 2.61 ne = 2.66	no = 2.60 ne = 2.65
Dielectric Constant	c~9.66	c~9.66
Thermal Conductivity (N-type, 0.02 ohm.cm)	a~4.2 W/cm·K@298K c~3.7 W/cm·K@298K
Thermal Conductivity (Semi-insulating)	a~4.9 W/cm·K@298K c~3.9 W/cm·K@298K	a~4.6 W/cm·K@298K c~3.2 W/cm·K@298K
Band-gap	3.23 eV	3.02 eV
Break-Down Electrical Field	3-5×106V/cm	3-5×106V/cm
Saturation Drift Velocity	2.0×105m/s	2.0×105m/s

SiC Applications

Application areas

1 high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN,
diodes, IGBT, MOSFET
2 optoelectronic devices: mainly used in GaN/SiC blue LED substrate material (GaN/SiC) LED

4H-N 4inch diameter Silicon Carbide (SiC) Substrate Specification

6inch N-Type SiC Substrates Specifications
Property	P-MOS Grade	P-SBD Grade	D Grade
Crystal Specifications
Crystal Form	4H
Polytype Area	None Permitted		Area≤5%
(MPD) a	≤0.2 /cm2	≤0.5 /cm2	≤5 /cm2
Hex Plates	None Permitted		Area≤5%
Hexagonal Polycrystal	None Permitted
Inclusions a	Area≤0.05%	Area≤0.05%	N/A
Resistivity	0.015Ω•cm—0.025Ω•cm	0.015Ω•cm—0.025Ω•cm	0.014Ω•cm—0.028Ω•cm
(EPD)a	≤4000/cm2	≤8000/cm2	N/A
(TED)a	≤3000/cm2	≤6000/cm2	N/A
(BPD)a	≤1000/cm2	≤2000/cm2	N/A
(TSD)a	≤600/cm2	≤1000/cm2	N/A
(Stacking Fault)	≤0.5% Area	≤1% Area	N/A
Surface Metal Contamination	(Al, Cr, Fe, Ni, Cu, Zn, Pb, Na, K, Ti, Ca ,V, Mn) ≤1E11 cm-2
Mechanical Specifications
Diameter	150.0 mm +0mm/-0.2mm
Surface Orientation	Off-Axis:4°toward <11-20>±0.5°
Primary Flat Length	47.5 mm ± 1.5 mm
Secondary Flat Length	No Secondary Flat
Primary Flat Orientation	<11-20>±1°
Secondary Flat Orientation	N/A
Orthogonal Misorientation	±5.0°
Surface Finish	C-Face:Optical Polish,Si-Face:CMP
Wafer Edge	Beveling
Surface Roughness (10μm×10μm)	Si Face Ra≤0.20 nm ； C Face Ra≤0.50 nm
Thickness a	350.0μm± 25.0 μm
LTV(10mm×10mm)a	≤2μm		≤3μm
(TTV)a	≤6μm		≤10μm
(BOW) a	≤15μm	≤25μm	≤40μm
(Warp) a	≤25μm	≤40μm	≤60μm
Surface Specifications
Chips/Indents	None Permitted ≥0.5mm Width and Depth		Qty.2 ≤1.0 mm Width and Depth
Scratches a (Si Face,CS8520)	≤5 and Cumulative Length≤0.5×Wafer Diameter		≤5 and Cumulative Length≤1.5× Wafer Diameter
TUA(2mm*2mm)	≥98%	≥95%	N/A
Cracks	None Permitted
Contamination	None Permitted
Edge Exclusion	3mm

CATALOGUE COMMON SIZE In OUR INVENTORY LIST

4H-N Type / High Purity SiC wafer/ingots 2 inch 4H N-Type SiC wafer/ingots 3 inch 4H N-Type SiC wafer 4 inch 4H N-Type SiC wafer/ingots 6 inch 4H N-Type SiC wafer/ingots	4H Semi-insulating / High Purity SiC wafer 2 inch 4H Semi-insulating SiC wafer 3 inch 4H Semi-insulating SiC wafer 4 inch 4H Semi-insulating SiC wafer 6 inch 4H Semi-insulating SiC wafer
6H N-Type SiC wafer 2 inch 6H N-Type SiC wafer/ingot	Customzied size for 2-6inch

>Packaging – Logistcs

we concerns each details of the package , cleaning, anti-static , shock treatment .

According to the quantity and shape of the product , we will take a different packaging process! Almost by single wafer cassettes or 25pcs cassette in 100 grade cleaning room.

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