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6 Inch Sapphire Based AlN Templates Wafer For 5G BAW Devices Sapphire wafer sapphire window

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    Buy cheap 6 Inch Sapphire Based AlN Templates Wafer For 5G BAW Devices Sapphire wafer sapphire window from wholesalers
     
    Buy cheap 6 Inch Sapphire Based AlN Templates Wafer For 5G BAW Devices Sapphire wafer sapphire window from wholesalers
    • Buy cheap 6 Inch Sapphire Based AlN Templates Wafer For 5G BAW Devices Sapphire wafer sapphire window from wholesalers
    • Buy cheap 6 Inch Sapphire Based AlN Templates Wafer For 5G BAW Devices Sapphire wafer sapphire window from wholesalers
    • Buy cheap 6 Inch Sapphire Based AlN Templates Wafer For 5G BAW Devices Sapphire wafer sapphire window from wholesalers

    6 Inch Sapphire Based AlN Templates Wafer For 5G BAW Devices Sapphire wafer sapphire window

    Ask Lasest Price
    Brand Name : ZMKJ
    Model Number : 2inch AlN-sapphire
    Price : by case
    Payment Terms : T/T, Western Union, paypal
    Supply Ability : 50pcs/month
    Delivery Time : in 30days
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    6 Inch Sapphire Based AlN Templates Wafer For 5G BAW Devices Sapphire wafer sapphire window

    2inch 4iinch 6Inch Sapphire based AlN templates AlN film on sapphire substrate sapphire window sapphire wafer


    Applications of AlN template
    Silicon-based semiconductor technology has reached its limits and could not satisfy the requirements of future
    electronic devices. As a typical kind of 3rd/4th-generation semiconductor material, aluminum nitride (AlN) has
    superior physical and chemical properties such as wide bandgap, high thermal conductivity, high breakdown filed,
    high electronic mobility and corrosion/radiation resistance, and is a perfect substrate for optoelectronic devices,
    radio frequency (RF) devices, high-power/high-frequency electronic devices, etc.. Particularly, AlN substrate is the
    best candidate for UV-LED, UV detectors, UV lasers, 5G high-power/high-frequency RF devices and 5G SAW/BAW
    devices, which could widely be used in environmental protection, electronics, wireless communications, printing,
    biology, healthcare, military and other fields, such as UV purification/sterilization, UV curing, photocatalysis, coun
    terfeit detection, high-density storage, medical phototherapy, drug discovery, wireless and secure communication,
    aerospace/deep-space detection and other fields.
    we have developed a serials of proprietary processes and technologies to fabricate
    high-quality AlN templates. At present, Our OEM is the only company worldwide who can produce 2-6 inch AlN
    templates in large-scale industrial production capability with capacity of 300,000 pieces in 2020 to meet explosive
    market demand from UVC-LED, 5G wireless communication, UV detectors and sensors etc
    Our OEM has developed a serials of proprietary technologies and the-state-of-the art PVT growth reactors and facilities to
    fabricate different sizes of high-quality single crystalline AlN wafers, AlN temlpates. We are one of the few world-leading
    high-tech companies who own full AlN fabrication capabilities to produce high-quality AlN boules and wafers, and provide
    professional services and turn-key solutions to our customers,arranged from the growth reactor and hotzone design,
    modeling and simulation, process design and optimization, crystal growth,
    wafering and material characterization. Up to April 2019, they have applied more than 27 patents (including PCT).
    Specification
    Characteristic Specification

    Other relaterd 4INCH GaN Template Specification


    GaN/ Al₂O₃ Substrates (4") 4inch
    ItemUn-dopedN-type

    High-doped

    N-type

    Size (mm)Φ100.0±0.5 (4")
    Substrate StructureGaN on Sapphire(0001)
    SurfaceFinished(Standard: SSP Option: DSP)
    Thickness (μm)4.5±0.5; 20±2;Customized
    Conduction TypeUn-dopedN-typeHigh-doped N-type
    Resistivity (Ω·cm)(300K)≤0.5≤0.05≤0.01
    GaN Thickness Uniformity
    ≤±10% (4")
    Dislocation Density (cm-2)
    ≤5×108
    Useable Surface Area>90%
    PackagePackaged in a class 100 clean room environment.

    Crystal structure

    Wurtzite

    Lattice constant (Å)a=3.112, c=4.982
    Conduction band typeDirect bandgap
    Density (g/cm3)3.23
    Surface microhardness (Knoop test)800
    Melting point (℃)2750 (10-100 bar in N2)
    Thermal conductivity (W/m·K)320
    Band gap energy (eV)6.28
    Electron mobility (V·s/cm2)1100
    Electric breakdown field (MV/cm)11.7

    Quality 6 Inch Sapphire Based AlN Templates Wafer For 5G BAW Devices Sapphire wafer sapphire window for sale
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