Silicon carbide wafer is a kind of basic material widely evaluated
in semiconductor device manufacturing. It has the characteristics
of high hardness, high heat resistance, high chemical stability and
high temperature resistance. The following are some of the main
applications of silicon carbide wafers in semiconductor device
manufacturing:
Power semiconductor device manufacturing: Silicon carbide wafers
are widely used in power semiconductor device manufacturing, such
as IGBT, MOSFET, differential and so on. Because the silicon
carbide high breakdown has the characteristics of resistance
strength, high thermal conductivity and low on-resistance, it can
greatly improve the performance of power semiconductor devices,
such as reducing the switching loss and improving the switching
speed.
Optoelectronic device manufacturing: Silicon carbide wafers are
also used to manufacture optoelectronic devices, such as leds,
laser attenuation, etc. Silicon carbide wafers have optical
brightness and high temperature resistance, giving them advantages
in the manufacture of high temperature leds and high power lasers.
Wireless communication device manufacturing: silicon carbide
devices can also be used to manufacture wireless communication
devices, such as SIC MESFET, SIC HEMT, etc. Silicon carbide devices
have the characteristics of high electron mobility and high
microwave frequency response speed, which has potential application
value in high frequency devices.
Other applications: Silicon carbide wafers can also be used to
manufacture sensors, thermoelectric devices, solar cells and other
fields. The high hardness and chemical stability of silicon carbide
wafers have potential applications in the manufacture of
wear-resistant and corrosion-resistant components.
