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VGF 2 Inch 4Inch N / P Type GaAs Wafer Semiconductor Substrate For Epitaxial Growth

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VGF 2 Inch 4Inch N / P Type GaAs Wafer Semiconductor Substrate For Epitaxial Growth

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Brand Name :	ZMSH
Model Number :	GaAs substrate
Certification :	ROHS
Price :	BY case
Payment Terms :	T/T, Western Union
Delivery Time :	4-6weeks

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VGF 2 Inch 4Inch N / P Type GaAs Wafer Semiconductor Substrate For Epitaxial Growth

VGF 2 Inch 4Inch N Type P Type GaAs Wafer Semiconductor Substrate For Epitaxial Growth

VGF 2inch 4inch 6inch n-type prime grade GaAs wafer for epitaxial growth

Gallium arsenide can be made into semi-insulating high-resistance materials with resistivity more than 3 orders of magnitude higher than silicon and germanium, which are used to make integrated circuit substrates, infrared detectors, gamma photon detectors, etc. Because its electron mobility is 5 to 6 times greater than that of silicon, it has important applications in the manufacture of microwave devices and high-speed digital circuits. Gallium arsenide made of gallium arsenide can be made into semi-insulating high-resistance materials with resistivity of more than 3 orders of magnitude higher than silicon and germanium, which are used to make integrated circuit substrates and infrared detectors.

1. Application of gallium arsenide in optoelectronics

2. Application of gallium arsenide in microelectronics

3. Application of gallium arsenide in communication

4. Application of gallium arsenide in microwave

5. Application of gallium arsenide in solar cells

GaAs Wafers Specification

Type/Dopant	Semi-Insulated	P-Type/Zn	N-Type/Si	N-Type/Si
Application	Micro Eletronic	LED		Laser Diode
Growth Method	VGF
Diameter	2", 3", 4", 6"
Orientation	(100)±0.5°
Thickness (µm)	350-625um±25um
OF/IF	US EJ or Notch
Carrier Concentration	-	(0.5-5)*1019	(0.4-4)*1018	(0.4-0.25)*1018
Resistivity (ohm-cm)	>107	(1.2-9.9)*10-3	(1.2-9.9)*10-3	(1.2-9.9)*10-3
Mobility (cm2/V.S.)	>4000	50-120	>1000	>1500
Etch Pitch Density (/cm2)	<5000	<5000	<5000	<500
TTV [P/P] (µm)	<5
TTV [P/E] (µm)	<10
Warp (µm)	<10
Surface Finished	P/P, P/E, E/E

Note: Other Specifications may be available upon request

Gallium arsenide is the most important and widely used semiconductor material in compound semiconductors, and it is also the most mature and the largest compound semiconductor material in production at present.

Gallium arsenide devices that have been used are:

Microwave diode, Gunn diode, varactor diode, etc.
Microwave transistors: field effect transistor (FET), high electron mobility transistor (HEMT), heterojunction bipolar transistor (HBT), etc.
Integrated circuit: microwave monolithic integrated circuit (MMIC), ultra-high speed integrated circuit (VHSIC), etc.
Hall components, etc.
Infrared light-emitting diode (IR LED); Visible light-emitting diode (LED, used as substrate);
Laser diode (LD);
Light detector;
High-efficiency solar cell;

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VGF 2 Inch 4Inch N / P Type GaAs Wafer Semiconductor Substrate For Epitaxial Growth

VGF 2 Inch 4Inch N / P Type GaAs Wafer Semiconductor Substrate For Epitaxial Growth

VGF 2 Inch 4Inch N / P Type GaAs Wafer Semiconductor Substrate For Epitaxial Growth

VGF 2inch 4inch 6inch n-type prime grade GaAs wafer for epitaxial growth

GaAs Wafers Specification

Gallium arsenide devices that have been used are:

Epitaxial Growth Semiconductor Substrate

P Type GaAs Wafer

GaAs Wafer Semiconductor Substrate

VGF 2 Inch 4Inch N / P Type GaAs Wafer Semiconductor Substrate For Epitaxial Growth