4inch 101.6mm Sapphire Wafer Substrate Carrier Single Side Polished
Single Crystal Al2O3
About synthetic sapphire crystal
Sapphire is a single crystal of alumina and is the second-hardest
material in nature, after diamond. Sapphire has good light
transmittance, high strength, collision resistance, wear
resistance, corrosion resistance, and high temperature and
high-pressure resistance, biocompatibility is an ideal substrate
material for the production of semiconductor optoelectronic
devices, the electrical properties of sapphire make it become the
substrate material for the production of the white and blue LED.
Our company's long-term production thickness ≧0.1mm, and its shape
size ≧Φ2" high precision sapphire wafer. In addition to the
conventional Φ2 ", Φ4 ", Φ6 ", Φ8 ", Φ10 ", Φ12 " and other sizes
can be customized, please contact our sales staff.
The sapphire (Al₂O) ₃ substrate is a kind of material for LED
chips. Due to its high stability, sapphire ₃ is suitable for
high-temperature growth. Finally, sapphire is mechanically strong
and easy to handle and clean. Therefore, sapphire is generally used
as a substrate for most processes.
Sapphire Properties
| Physical |
| Chemical formula | Al2O3 |
| Density | 3.97 g/cm3 |
| Hardness | 9 Mohs |
| Melting point | 2050oC |
| Max. use temperature | 1800-1900oC |
| Mechanical |
| Tensile strength | 250-400 MPa |
| Compressive strength | 2000 MPa |
| Poisson's ratio | 0.25-0.30 |
| Young's Modulus | 350-400 GPa |
| Bending strength | 450-860 MPa |
| Rapture Modulus | 350-690 MPa |
| Thermal |
| Linear expansion rate (at 293-323 K) | 5.0*10-6K-1(⊥ C) |
| 6.6*10-6K-1(∥ C) |
| Thermal conductivity (at 298 K) | 30.3 W/(m*K)(⊥ C) |
| 32.5 W/(m*K)(∥ C) |
| Specific heat (at 298 K) | 0.10 cal*g-1 |
| Electrical |
| Resistivity (at 298 K) | 5.0*1018 Ω*cm(⊥ C) |
| 1.3-2.9*1019 Ω*cm(∥ C) |
| Dielectric constant (at 298 K, in 103-109 Hz interval) | 9.3 (⊥ C) |
| 11.5 (∥ C) |
Synthetic sapphire is a transparent single crystal 99.99% pure Al2O3 that exhibits a
unique combination of physical, chemical, electrical and optical
properties: high thermal conductivity, high strength, scratch
resistance, hardness (9 on the Mohs scale), transparent in a wide
range of wavelength, chemical inertness.
High crystal perfection, low reactivity, and appropriate unit cell
size make sapphire an excellent substrate in the semiconductor
industry for blue light-emitting diodes (LED).
Since Nobel Laureate in Physics Shuji Nakamura used the sapphire
substrate in the 1990s for LED, the demand for sapphire crystal has
been growing rapidly.
It drives the development of new markets like general lighting,
backside lighting in TV-sets, displays, consumer appliances,
aerospace and defense, and other applications
Specifications of 4inch sapphire wafer substrate carrier
| Specs | 2 inch | 4 inch | 6 inch | 8inch |
| Dia | 50.8 ± 0.1 mm | 100 ± 0.1 mm | 150 ± 0.1 mm | 200 ± 0.1 mm |
| Thick | 430 ± 25 um | 650 ± 25 um | 1300 ± 25 um | 1300 ± 25 um |
| Ra | Ra ≤ 0.3 nm | Ra ≤ 0.3nm | Ra ≤ 0.3nm | Ra ≤ 0.3 nm |
| TTV | ≤ 10um | ≤ 10um | ≤ 10um | ≤ 10um |
| Tolerance | ≤ 3 um | ≤ 3 um | ≤ 3 um | ≤ 3 um |
| Quality surface | 20/10 | 20/10 | 20/10 | 20/10 |
| Surface state | DSP SSP Grinding |
| Shape | Circle with notch or flatness |
| Chamfer | 45°,C Shape |
| Material | Al2O3 99.999% |
| N/O | Sapphire wafer |
The material is grown and orientated, and substrates are fabricated
and polished to an extremely smooth damage free Epi-Ready surface
on one or both sides of the wafer. A variety of wafer orientations
and sizes up to 6" in diameter are available.
A-Plane sapphire substrates - are usually used for hybrid microelectronic
applications requiring a uniform dielectric constant and highly
insulating characteristics.
C-Plane substrates - tend to be used for all-V and ll-Vl compounds, such
as GaN, for bright blue and green LED and laser diodes.
R-Plane substrates - these are preferred for the hetero-epitaxial
deposition of silicon used in microelectronic IC applications.
Standard wafer 2 inch C-plane sapphire wafer SSP/DSP
3 inch C-plane sapphire wafer SSP/DSP
4 inch C-plane sapphire wafer SSP/DSP
6 inch C-plane sapphire wafer SSP/DSP | Special Cut
A-plane (1120) sapphire wafer
R-plane (1102) sapphire wafer
M-plane (1010) sapphire wafer
N-plane (1123) sapphire wafer
C-axis with a 0.5°~ 4° offcut, toward A-axis or M-axis
Other customized orientation |
Customized Size
10*10mm sapphire wafer
20*20mm sapphire wafer
Ultra thin (100um) sapphire wafer
8 inch sapphire wafer
| Patterned Sapphire Substrate (PSS)
2 inch C-plane PSS
4 inch C-plane PSS
|
| 2inch | DSP C-AXIS 0.1mm/0.175mm/0.2mm/0.3mm/0.4mm /0.5mm/ 1.0mmt SSP C-axis 0.2/0.43mm (DSP＆SSP) A-axis/M-axis/R-axis 0.43mm
|
| 3inch | DSP/ SSP C-axis 0.43mm/0.5mm
|
| 4Inch | dsp c-axis 0.4mm/ 0.5mm/1.0mm ssp c-axis 0.5mm/0.65mm/1.0mmt
|
| 6inch | ssp c-axis 1.0mm/1.3mmm
dsp c-axis 0.65mm/ 0.8mm/1.0mmt
|
101.6mm 4inch Sapphire wafer sapphire Details
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