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Polishing Silicon Carbide Ingot Substrate SiC Chip Semiconductor 8inch 200mm

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Polishing Silicon Carbide Ingot Substrate SiC Chip Semiconductor 8inch 200mm

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Brand Name :	ZMKJ
Model Number :	8inch sic wafers 4h-n
Certification :	ROHS
Price :	by case
Payment Terms :	T/T, Western Union, MoneyGram
Supply Ability :	1-50pcs/month
Delivery Time :	4-6weeks
MOQ :	1

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Polishing Silicon Carbide Ingot Substrate SiC Chip Semiconductor 8inch 200mm

SiC Substrate/Wafers (150mm, 200mm) Silicon Carbide Ceramic Excellent CorrosionSingle crystal single side polished silicon wafer sic wafer polishing wafer manufacturer Silicon Carbide SiC Wafer4H-N SIC ingots/200mm SiC Wafers 200mm SiC Wafers

About Silicon Carbide (SiC)Crystal

Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.

Property	4H-SiC, Single Crystal	6H-SiC, Single Crystal
Lattice Parameters	a=3.076 Å c=10.053 Å	a=3.073 Å c=15.117 Å
Stacking Sequence	ABCB	ABCACB
Mohs Hardness	≈9.2	≈9.2
Density	3.21 g/cm3	3.21 g/cm3
Therm. Expansion Coefficient	4-5×10-6/K	4-5×10-6/K
Refraction Index @750nm	no = 2.61 ne = 2.66	no = 2.60 ne = 2.65
Dielectric Constant	c~9.66	c~9.66
Thermal Conductivity (N-type, 0.02 ohm.cm)	a~4.2 W/cm·K@298K c~3.7 W/cm·K@298K
Thermal Conductivity (Semi-insulating)	a~4.9 W/cm·K@298K c~3.9 W/cm·K@298K	a~4.6 W/cm·K@298K c~3.2 W/cm·K@298K
Band-gap	3.23 eV	3.02 eV
Break-Down Electrical Field	3-5×106V/cm	3-5×106V/cm
Saturation Drift Velocity	2.0×105m/s	2.0×105m/s

The current difficulties in the preparation of 200mm 4H-SiC crystals mainly involve.
1) The preparation of high-quality 200mm 4H-SiC seed crystals;
2) Large size temperature field non-uniformity and nucleation process control;
3) The transport efficiency and evolution of gaseous components in large size crystal growth systems;
4) Crystal cracking and defect proliferation caused by large size thermal stress increase.

To overcome these challenges and obtain high quality 200mm SiC wafers,solutions are proposed:
In terms of 200mm seed crystal preparation, appropriate temperature field, flow field, and expanding assemblwere studied and designed to take into account crystal quality and expanding size; Starting with a 150mm SiCseed crystal, carry out seed crystal iteration to gradually expand the SiC crystal size until it reaches 200mm;Throuch multiple crystal growth and processing, gradually optimize the crystal quality in the crystal expandingarea, and improve the quality of 200mm seed crystals.
n terms of 200mm conductive crvstal and substrate preparation. research has optimized the temperature fieland flow field design for large size crystal growth, conduct 200mm conductive SiC crystal growth, and controldoping uniformity. After rough processing and shaping of the crystal, an 8-inch electrically conductive 4H-SiCingot with a standard diameter was obtained. After cutting, grinding, polishing, processing to obtain SiC 200mmwafers with a thickness of 525um or so.

About ZMKJ Company

ZMKJ can provides high quality single crystal SiC wafer ( Silicon Carbide ) to electronic and optoelectronic industry . SiC wafer is a next generation semiconductor material , with unique electrical properties and excellent thermal properties , compared to silicon wafer and GaAs wafer , SiC wafer is more suitable for high temperature and high power device application . SiC wafer can be supplied in diameter 2-6 inch , both 4H and 6H SiC , N-type , Nitrogen doped , and semi-insulating type available . Please contact us for more product information .

FAQ:

Q: What's the way of shipping and cost?

A:(1) We accept DHL, Fedex, EMS etc.

(2) it is fine If you have your own express account ,If not,we could help you ship them and

Freight is in accordance with the actual settlement.

Q: How to pay?

A: T/T 100％ deposit before delivery.

Q: What's your MOQ?

A: (1) For inventory, the MOQ is 1pcs. if 2-5pcs it's better.

(2) For customized commen products, the MOQ is 10pcs up.

Q: What's the delivery time?

A: (1) For the standard products

For inventory: the delivery is 5 workdays after you place the order.

For customized products: the delivery is 2 -4 weeks after you order contact.

Q: Do you have standard products?

A: Our standard products in stock. as like substrates 4inch 0.35mm.

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