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2 / 3 / 4 / 6inch Silicon Carbide Wafer 4H-N / Semi Type SiC Ingots Industrial

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    Buy cheap 2 / 3 / 4 / 6inch Silicon Carbide Wafer 4H-N / Semi Type SiC Ingots Industrial from wholesalers
     
    Buy cheap 2 / 3 / 4 / 6inch Silicon Carbide Wafer 4H-N / Semi Type SiC Ingots Industrial from wholesalers
    • Buy cheap 2 / 3 / 4 / 6inch Silicon Carbide Wafer 4H-N / Semi Type SiC Ingots Industrial from wholesalers
    • Buy cheap 2 / 3 / 4 / 6inch Silicon Carbide Wafer 4H-N / Semi Type SiC Ingots Industrial from wholesalers
    • Buy cheap 2 / 3 / 4 / 6inch Silicon Carbide Wafer 4H-N / Semi Type SiC Ingots Industrial from wholesalers
    • Buy cheap 2 / 3 / 4 / 6inch Silicon Carbide Wafer 4H-N / Semi Type SiC Ingots Industrial from wholesalers

    2 / 3 / 4 / 6inch Silicon Carbide Wafer 4H-N / Semi Type SiC Ingots Industrial

    Ask Lasest Price
    Brand Name : ZMKJ
    Model Number : 4inch SiC Bulks
    Price : by case
    Payment Terms : T/T, Western Union, MoneyGram
    Supply Ability : 1-50pcs/month
    Delivery Time : 2-5weeks
    • Product Details
    • Company Profile

    2 / 3 / 4 / 6inch Silicon Carbide Wafer 4H-N / Semi Type SiC Ingots Industrial

    High Quality Silicon-on-Insulator Wafers SIC Silicon Carbide Wafers Customized High quality high precision Dia.700mm Sic spherical Mirror metal optical reflector Customized High quality Dia.500mm silver-plated spherical reflector metal optical reflector 2inch/3inch/4inch/6inch/8inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafers,


    Products Description

    Product Name
    Metal Plane Mirror
    Material
    Monocrystalline Silicon
    Diameter
    500mm
    Surface Quality
    60-40
    Surface Accuracy

    PV:1/4 Lambda;

    RMS:1/30 Lambda
    Coating

    Reflectivity>90%

    Coating Film:@200-1100nm
    Application
    Reflecting System
    Description of SIC Wafer
    Property4H-SiC, Single Crystal6H-SiC, Single Crystal
    Lattice Parametersa=3.076 Å c=10.053 Åa=3.073 Å c=15.117 Å
    Stacking SequenceABCBABCACB
    Mohs Hardness≈9.2≈9.2
    Density3.21 g/cm33.21 g/cm3
    Therm. Expansion Coefficient4-5×10-6/K4-5×10-6/K
    Refraction Index @750nm

    no = 2.61

    ne = 2.66

    no = 2.60

    ne = 2.65

    Dielectric Constantc~9.66c~9.66
    Thermal Conductivity (N-type, 0.02 ohm.cm)

    a~4.2 W/cm·K@298K

    c~3.7 W/cm·K@298K

    Thermal Conductivity (Semi-insulating)

    a~4.9 W/cm·K@298K

    c~3.9 W/cm·K@298K

    a~4.6 W/cm·K@298K

    c~3.2 W/cm·K@298K

    Band-gap3.23 eV3.02 eV
    Break-Down Electrical Field3-5×106V/cm3-5×106V/cm
    Saturation Drift Velocity2.0×105m/s2.0×105m/s

    Catalog Commen Size

    4H-N Type / High Purity SiC wafer/ingots
    2 inch 4H N-Type SiC wafer/ingots
    3 inch 4H N-Type SiC wafer
    4 inch 4H N-Type SiC wafer/ingots
    6 inch 4H N-Type SiC wafer/ingots

    4H Semi-insulating / High Purity SiC wafer

    2 inch 4H Semi-insulating SiC wafer
    3 inch 4H Semi-insulating SiC wafer
    4 inch 4H Semi-insulating SiC wafer
    6 inch 4H Semi-insulating SiC wafer
    6H N-Type SiC wafer
    2 inch 6H N-Type SiC wafer/ingot
    Customzied size for 2-6inch

    Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the
    important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power
    LEDs.


    PropertiesunitSiliconSiCGaN
    Bandgap widtheV1.123.263.41
    Breakdown fieldMV/cm0.232.23.3
    Electron mobilitycm^2/Vs14009501500
    Drift valocity10^7 cm/s12.72.5
    Thermal conductivityW/cmK1.53.81.3


    About SiC seed crystal ingot detail

    About ZMKJ Company


    ZMKJ can provides high quality single crystal SiC wafer ( Silicon Carbide ) to electronic and optoelectronic industry . SiC wafer is a next generation semiconductor material , with unique electrical properties and excellent thermal properties , compared to silicon wafer and GaAs wafer , SiC wafer is more suitable for high temperature and high power device application . SiC wafer can be supplied in diameter 2-6 inch , both 4H and 6H SiC , N-type , Nitrogen doped , and semi-insulating type available . Please contact us for more product information .


    FAQ:

    Q: What's the way of shipping and cost?

    A:(1) We accept DHL, Fedex, EMS etc.

    (2) it is fine If you have your own express account ,If not,we could help you ship them and

    Freight is in accordance with the actual settlement.


    Q: How to pay?

    A: T/T 100% deposit before delivery.


    Q: What's your MOQ?

    A: (1) For inventory, the MOQ is 1pcs. if 2-5pcs it's better.

    (2) For customized commen products, the MOQ is 10pcs up.


    Q: What's the delivery time?

    A: (1) For the standard products

    For inventory: the delivery is 5 workdays after you place the order.

    For customized products: the delivery is 2 -4 weeks after you order contact.


    Q: Do you have standard products?

    A: Our standard products in stock. as like substrates 4inch 0.35mm.


    Quality 2 / 3 / 4 / 6inch Silicon Carbide Wafer 4H-N / Semi Type SiC Ingots Industrial for sale
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