2-4inch Gallium antimonide GaSb Substrate Single Crystal
Monocrystal for Semiconductor
Indium arsenide InAs Substrate Single Crystal Monocrystal
Semiconductor substrate
Single Crystal Semiconductor Substrate Indium Arsenide InAs wafer
Application
Indium Arsenide (InAs) single crystal semiconductor substrates are
materials with unique properties, widely used in the electronics
and optoelectronics fields. Here are some possible applications:
1. High-Performance Infrared Detectors
Due to its narrow bandgap, InAs substrates are ideal for
manufacturing high-performance infrared detectors, particularly in
the mid-infrared and long-wavelength infrared ranges. These
detectors are essential in applications such as night vision,
thermal imaging, and environmental monitoring.
2. Quantum Dot Technology
InAs is used in the fabrication of quantum dots, which are critical
for developing advanced optoelectronic devices like quantum dot
lasers, quantum computing systems, and high-efficiency solar cells.
Its superior electron mobility and quantum confinement effects make
it a prime candidate for next-generation semiconductor devices.
3. High-Speed Electronics
InAs substrates offer excellent electron mobility, making them
suitable for high-speed electronics, such as high-frequency
transistors (HEMTs) and high-speed integrated circuits used in
telecommunications and radar systems.
4. Optoelectronic Devices
InAs is a popular material for fabricating optoelectronic devices,
such as lasers and photodetectors, due to its direct bandgap and
high electron mobility. These devices are critical for applications
in fiber-optic communication, medical imaging, and spectroscopy.
5. Thermoelectric Devices
InAs's superior thermoelectric properties make it a promising
candidate for thermoelectric generators and coolers, which are used
to convert temperature gradients into electrical energy and for
cooling applications in electronics.
In summary, InAs substrates play a crucial role in advanced
technologies ranging from infrared detection to quantum computing
and high-speed electronics, making them indispensable in modern
semiconductor and optoelectronic applications.
InAs substrate
| Product Name | Indium arsenide (InAs) crystal |
| Product Specifications | Growth method: CZ Crystal Orientation: <100> Conductive Type: N-type Doping type: undoped Carrier concentration: 2 ~ 5E16 / cm 3
Mobility:> 18500cm 2 / VS
Common Specifications Dimensions: dia4 "× 0.45 1sp |
| Standard Package | 1000 clean room, 100 clean bag or single box |
InAs Product Specification
Growth | LEC |
Diameter | 2/2 inch |
Thickness | 500-625 um |
Orientation | <100> / <111> / <110> or others |
Off Orientation | Off 2° to 10° |
Surface | SSP/DSP |
Flat Options | EJ or SEMI. Std . |
TTV | <= 10 um |
EPD | <= 15000 cm-2 |
Grade | Epi polished grade / mechanical grade |
Package | Package |
Electrical and Doping Specification
Dopant available | S / Zn / Undoped |
Type of conductivity | N / P |
Concentration | 1E17 - 5E18 cm-3 |
Mobility | 100 ~ 25000 cm2 / v.s. |
InAsSb/In-AsPSb, InNAsSb and other heterojunction materials can be
grown on InAs single crystal as the substrate, and an infrared
light-emitting device with a wavelength of 2 to 14 μm can be
fabricated. The AlGaSb superlattice structure material can also be
epitaxially grown by using InAs single crystal substrate.
Mid-infrared quantum cascade laser. These infrared devices have
good application prospects in the fields of gas monitoring,
low-loss fiber communication, etc. In addition, InAs single
crystals have high electron mobility and are ideal materials for
making Hall devices.
Features:
1. The crystal is grown by liquid-sealed straight-drawing
technology (LEC), with mature technology and stable electrical
performance.
2, using X-ray directional instrument for precise orientation, the
crystal orientation deviation is only ±0.5°
3, the wafer is polished by chemical mechanical polishing (CMP)
technology, surface roughness <0.5nm
4, to achieve the "open box ready to use" requirements
5, according to user requirements, special specifications product
processing
| crystal | dope | type |
Ion carrier concentration
cm-3
| mobility(cm2/V.s) | MPD(cm-2) | SIZE |
| InAs | un-dope | N | 5*1016 | ³2*104 | <5*104 | Φ2″×0.5mm
Φ3″×0.5mm |
| InAs | Sn | N | (5-20) *1017 | >2000 | <5*104 | Φ2″×0.5mm
Φ3″×0.5mm |
| InAs | Zn | P | (1-20) *1017 | 100-300 | <5*104 | Φ2″×0.5mm
Φ3″×0.5mm |
| InAs | S | N | (1-10)*1017 | >2000 | <5*104 | Φ2″×0.5mm
Φ3″×0.5mm |
| size (mm) | Dia50.8x0.5mm,10×10×0.5mm,10×5×0.5mm can be customized |
| ra | Surface roughness(Ra):<=5A |
| polish | single or doubles side polished |
| package | 100 grade cleaning plastic bag in 1000 cleaning room |
Q: Are you trading company or manufacturer ?
A: zmkj is a trading company but have a sapphire manufacturer
as a supplier of semiconductor materials wafers for a wide span of
applications.
Q: How long is your delivery time?
A: Generally it is 5-10 days if the goods are in stock. or it is
15-20 days if the goods are not
in stock,it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
A: Yes, we could offer the sample for free charge but do not pay
the cost of freight.
Q: What is your terms of payment ?
A: Payment<=1000USD, 100% in advance. Payment>=1000USD,
50% T/T in advance ,balance before shippment.
