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6H-N Semi-insulating SiC Substarte / Wafer For MOSFETs、JFETs BJTs High Resistivity Wide Bandgap

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    Buy cheap 6H-N Semi-insulating SiC Substarte / Wafer For MOSFETs、JFETs BJTs High Resistivity Wide Bandgap from wholesalers
     
    Buy cheap 6H-N Semi-insulating SiC Substarte / Wafer For MOSFETs、JFETs BJTs High Resistivity Wide Bandgap from wholesalers
    • Buy cheap 6H-N Semi-insulating SiC Substarte / Wafer For MOSFETs、JFETs BJTs High Resistivity Wide Bandgap from wholesalers
    • Buy cheap 6H-N Semi-insulating SiC Substarte / Wafer For MOSFETs、JFETs BJTs High Resistivity Wide Bandgap from wholesalers
    • Buy cheap 6H-N Semi-insulating SiC Substarte / Wafer For MOSFETs、JFETs BJTs High Resistivity Wide Bandgap from wholesalers

    6H-N Semi-insulating SiC Substarte / Wafer For MOSFETs、JFETs BJTs High Resistivity Wide Bandgap

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    Brand Name : ZMSH
    Model Number : 4H Semi-insulating SiC substarte/wafer
    Payment Terms : T/T
    Delivery Time : 2-4 weeks
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    6H-N Semi-insulating SiC Substarte / Wafer For MOSFETs、JFETs BJTs High Resistivity Wide Bandgap

    6H-N Semi-insulating SiC substarte/wafer for MOSFETs,JFETs BJTs,high resistivity wide bandgap

    Semi-insulating SiC substarte/wafer's abstract

    Semi-insulating silicon carbide (SiC) substrates/wafers have emerged as crucial materials in the realm of advanced electronic devices. Their unique properties, including wide bandgap, high thermal conductivity, and chemical stability, make them highly desirable for a wide range of applications. This abstract provides an overview of the properties and applications of semi-insulating SiC substrates/wafers. It discusses their semi-insulating behavior, which inhibits the free movement of electrons, thereby enhancing the performance and stability of electronic devices. The wide bandgap of SiC enables high electron drift and saturation drift velocities, essential for high-power and high-frequency applications. Additionally, the excellent thermal conductivity of SiC ensures efficient heat dissipation, making it suitable for use in harsh operating environments. The chemical stability and mechanical hardness of SiC further enhance its reliability and durability in various applications. Overall, semi-insulating SiC substrates/wafers offer a compelling solution for the development of next-generation electronic devices with enhanced performance and reliability.

    Semi-insulating SiC substarte/wafer's showcase

    Semi-insulating SiC substarte/wafer's data chart(partly)

    The main performance parameters
    Product Name
    Silicon carbide substrate, Silicon carbide wafer, SiC wafer, SiC substrate
    Growth method
    MOCVD
    Crystal Structure
    6H, 4H
    Lattice Parameters
    6H(a=3.073 Å c=15.117 Å),
    4H(a=3.076 Å c=10.053 Å )
    Stacking Sequence
    6H: ABCACB,
    4H: ABCB
    Grade
    Production Grade, Research Grade, Dummy Grade
    Conductivity type
    N-type or Semi-Insulating
    Band-gap
    3.23 eV
    Hardness
    9.2(mohs)
    Thermal Conductivity @300K
    3.2~4.9 W/ cm.K
    Dielectric constants
    e(11)=e(22)=9.66 e(33)=10.33
    Resistivity
    4H-SiC-N: 0.015~0.028 Ω·cm,
    6H-SiC-N: 0.02~0.1 Ω·cm,
    4H/6H-SiC-SI: >1E7 Ω·cm
    Packing
    Class 100 clean bag, in class 1000 clean room

    Standard Specification
    Product NameOrientationStandard SizeThicknessPolishing
    6H-SiC substrate
    4H-SiC substrate
    <0001>
    <0001> 4° off toward <11-20>
    <11-20>
    <10-10>
    Or other off-angle
    10x10mm
    10x5mm
    5x5mm
    20x20mm
    φ2" x 0.35mm
    φ3" x 0.35mm
    φ4" x 0.35mm
    φ4" x 0.5mm
    φ6" x 0.35mm
    Or others
    0.1mm
    0.2mm
    0.5mm
    1.0mm
    2.0mm
    Or others
    Fine ground
    Single side polished
    Double side polished

    Roughness: Ra<3A(0.3nm)
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    key applications:

    Semi-insulating silicon carbide (SiC) substrates/wafers find diverse applications across several high-performance electronic devices. Here are some key applications:

    1. Power Electronics: Semi-insulating SiC substrates are extensively used in the manufacturing of power devices such as Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), Junction Field-Effect Transistors (JFETs), and Bipolar Junction Transistors (BJTs). The wide bandgap of SiC allows these devices to operate at higher temperatures and voltages, resulting in improved efficiency and reduced losses in power conversion systems for applications like electric vehicles, renewable energy, and industrial power supplies.

    2. Radio Frequency (RF) Devices: SiC wafers are employed in RF devices such as microwave power amplifiers and RF switches. The high electron mobility and saturation velocity of SiC enable the development of high-frequency, high-power RF devices for applications like wireless communication, radar systems, and satellite communication.

    3. Optoelectronics: Semi-insulating SiC substrates are used in the fabrication of ultraviolet (UV) photodetectors and light-emitting diodes (LEDs). SiC's sensitivity to UV light makes it suitable for UV detection applications in areas such as flame detection, UV sterilization, and environmental monitoring.

    4. High-Temperature Electronics: SiC devices operate reliably at elevated temperatures, making them suitable for high-temperature applications like aerospace, automotive, and downhole drilling. SiC substrates are used to manufacture sensors, actuators, and control systems that can withstand harsh operating conditions.

    5. Photonics: SiC substrates are employed in the development of photonic devices such as optical switches, modulators, and waveguides. SiC's wide bandgap and high thermal conductivity enable the fabrication of high-power, high-speed photonic devices for applications in telecommunications, sensing, and optical computing.

    6. High-Frequency and High-Power Applications: SiC substrates are utilized in the production of high-frequency, high-power devices such as Schottky diodes, thyristors, and high-electron-mobility transistors (HEMTs). These devices find applications in radar systems, wireless communication infrastructure, and particle accelerators.

    In summary, semi-insulating SiC substrates/wafers play a crucial role in various electronic applications, offering superior performance, reliability, and efficiency compared to traditional semiconductor materials. Their versatility makes them a preferred choice for next-generation electronic systems across multiple industries.

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